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Spin Injection  |
We achieved a 92 % spin injection probability into a
semiconductor at 77
K. This was achieved by using a STM tip to locally inject spin polarized
electrons into a GaAs(110) surface. We also determined that a 5 nanometer
high step on the surface disrupts the spin injection probability,
lowering
it to 16 %.
Science 292 1518 (2000) (PDF)
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GaAs(001) Atomic Structure  |
We resolved the atomic structure of the GaAs(001)-(2
× 4) reconstructed surface using our STM and first principles
calculations from P. Kratzer and M. Scheffler at the Fritz Haber Institute
in Germany. This surface is the starting surface for the production
of the majority of all compound semiconductor devices such as: lasers
in CD-players and high speed transistors (HEMT) found in cell phones.
Physical Review Letters 83(15)
2989 (1999) (PDF)
abstract
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Ising Model  |
We discovered that the GaAs(001) surface behaves as
a 2D lattice-gas Ising system. The STM images the occupied and unoccupied
domains of the lattice gas on a scale comparable to the constituents
of the gas, give never-before-seen insight into the Ising model. Correlation
functions, directional nearest neighbor coupling energies, and four
critical exponents are measured.
Physical Review Letters 84(18)
4152 (2000). (PDF)
abstract
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