Publications

        1.  “Synthesis and Processing of Cubic Iron Pyrite Nanocrystals as a Photoactive Solar Cell Material,” M. A. Khan, J. Sarker, S. Y.  Lee, S. C. Mangham, J. Phys. Chem. C. (submitted).
        2. Synthesis and processing of phase pure cubic iron pyrite nanocrystals as a photoactive solar cell material,” M. Alam Khan, J. C. Sarker, S. Y. Lee, S. C. Mangham, M. O. Manasreh, Nano Letters. (Submitted).
        3. Large enhancement in the power conversion efficiency of InAs quantum dot solar cell by using a single layer anatase TiO2 anti-reflection coating,” R. Vasan, Y. F. Makableh, J. C. Sarker, and M. O. Manasreh, IEEE Electron Device Letters. (Submitted).
        4. Broadband Nanostructured Antireflection Coating for Enhancing InAs/GaAs Quantum Dots Solar Cells Performance,” J. C. Sarker, Y. F. Makableh, R. Vasan, S. Lee, M. O. Manasreh, and M. Benamara, IEEE J. Photovoltaic.  (submitted).
        5. Enhanced performance of surface modified InAs quantum dots solar cell by sol-gel grown tantalum pentoxide antireflection coating,” J. C. Sarker, R. Vasan,Y. F. Makableh, S. Lee, A.I. Nusir, and M. O. Manasreh, J. Solar Energy Matarials and Solar Cells. (Submitted).
        6. “Enhancement of GaAs solar cell performance by using a ZnO sol-gel anti-reflection coating,” Y. F. Makableh*, R. Vasan, J. C. Sarker, A. I. Nusir, S. Seal, and M. O. Manasreh, J. Solar Energy Matarials and Solar Cells. 123, 178-182 (2014). http://dx.doi.org/10.1016/j.solmat.2014.01.007
        7. Uncooled photodetector based on CdSe nanocrystlas with an interdigital metallization,” A. I. Nusir, J. Aguilar, Z. Bever, and M. O. Manasreh, Appl. Phys. Lett. 104, 051124 (2014).  http://dx.doi.org/10.1063/1.4864636
        8.  “Enhanced Response in InAs Quantum Dot in a Quantum Well Solar Cells by Using Poly-L-lysine   Homopolymers,” Y. F. Makableh, R. Vasan, S. Lee, M. Alam Khan, and M. O. Manasreh, Materials Research Society, Symp. Proc. Volume 1551 (2013).  http://dx.doi.org/10.1557/opl.2013.966
        9. Enhanced Photocurrent due to Interband Transitions from InAs Quantum Dots Embedded in InGaAs Quantum Well Solar Cells,” R. Vasan, Y. F. Makableh, J. C. Sarker, and M. O. Manasreh, Materials Research Society, Mater. Res. Soc. Symp. Proc. Vol. 1551 (2013). http://dx.doi.org/10.1557//opl.2013.742
        10. The Optimization of InP/ZnS Core/Shell Nanocrystals and TiO2 Nanotubes for Quantum Dot Sensitized Solar Cells,” Seungyong Lee, Rick Eyi, Mahmood Khan, Scott Little, M. O. Manasreh, Materials Research Society, Mater. Res. Soc. Symp. Proc. Vol. 1578 (2013). http://dx.doi.org/10.1557//opl.2013.984
        11. Colloidal growth, characterization and optoelectronic study of strong light absorbent inexpensive iron pyrite nanomaterials by using amine ligands for photovoltaics application,” M. Alam Khan, Scott A. Little, Y. Makablah, Scott Mangham, S.Y. Lee and M. O. Manasreh, Materials Research Society, Mater. Res. Soc. Symp. Proc. Vol. 1545  (2013).  http://dx.doi.org/10.1557/opl.2013.957
        12. Processing of pristine single and multiwalled carbon nanotubes as different stacking layers in bulk heterojunction solar cells,” M. Alam Khan, Michio Matsumura and M. O.  Manasreh, Materials Research Society, Spring 2013, Symposium B, San Francisco, April 1-5. (Accepted).
        13. Enhancement of the performance of InAs quantum dots solar cell by surface modification using  Poly-L-Lysine homopolymers,” Y. F. Makableh, R. Vasan, S. Lee, and O. M. Manasreh, Appl. Phys. Lett. 102, 051904 (2013).      http://dx.doi.org/10.1063/1.4789908
        14. “Synthesis of iron pyrite nanocrystals utilizing trioctylphosphine oxide (TOPO) for photovoltaic devices,” S. C. Mangham, M. A. Kahn, M. Benamara, M. O. Manasreh, Materials Letters 97, 144-147 (2013). http://dx.doi.org/10.1016/j.matlet.2013.01.101
        15. Colloidal Cu(InxGa1-x)Se2 nanocrystals for all-inorganic nanocomposite solar cells,” Vanga R. Reddy, Jiang Wu, and M. O. Manasreh, Materials Letters 92, 296-299 (2013). http://dx.doi.org/10.1016/j.matlet.2012.10.097
        16. “Colloidal CuInS2 Based Nanocrystals/TiO2 Nanotubes Arrays Composite Solar Cells Fabrication and Testing,” Vanga Reddy, William Wilson, Rick Eyi, Jiang Wu, Scott Mangham, Omar Manasreh, John Dixion and Andrew Wang, in Symposium CC: Functional Semiconductor Nanocrystals and Metal-Hybrid Structures, Mater. Res. Soc. Symp. Proc. vol. 1409 (2012). http://dx.doi.org/10.1557/opl.2012.729
        17. "Synthesis of Colloidal InP/ZnS Nanocrystals for a Photosensitizer," Seungyong Lee, Vanga R. Reddy, Jiang Wu, Rick Eyi and Omar Manasreh, in Symposium CC: Functional Semiconductor Nanocrystals and Metal-Hybrid Structures, Mater. Res. Soc. Symp. Proc. vol. 1409 (2012).  http://dx.doi.org/10.1557/opl.2012.778
        18. "Surface Plasmon Enhanced Photoluminescence in InAs Quantum Dots by Spherical Ag Nanoparticles," Scott C. Mangham, Jiang Wu, Seungyong Lee, Vanga R. Reddy and Omar Manasreh, in Symposium J: Photonic and Plasmonic Materials for Enhanced Photovoltaic Performance, Mater. Res. Soc. Symp. Proc. vol. 1391 (2012). http://dx.doi.org/10.1557/opl.2012.692
        19. "Localized Surface Plasmon Enhanced Quantum Dot Solar Cells," Jiang Wu, Scott Mangham, Rick Eyi, Seungyong Lee, Vanga R. Reddy and Omar Manasreh, in Symposium J: Photonic and Plasmonic Materials for Enhanced Photovoltaic Performance, Mater. Res. Soc. Symp. Proc. vol. 1391 (2012). http://dx.doi.org/10.1557/opl.2012.1213
        20.  “Intermediate band solar cells based on InAs quantum dots embedded in InxGa1-xAs quantum wells,” Y. M. F. Makableh, R. Vasan, M. O. Manasreh, IEEE Electron Device Letters (Submitted).
        21. “Characteristics of p-ZnO/n-GaN heterojunction photodetector,”  Abla Al-Zouhbi, N. S. Al-Din, M. O. Manasreh, Optical Review 19 (4), 235-237 (2012). http://dx.doi.org/ 10.1007/s10043-012-0035-5
        22. Surface plasmon enhanced intermediate band based quantum dots solar cells," Jiang Wu, S. Mangham, V. Reddy, M. O. Manasreh, and B. D. Weaver, Solar Energy Materials and Solar Cells 102, 44-49 (2012). http://dx.doi.org/10.1016/j.solmat.2012.03.032
        23.  “Strong interband transitions in InAs quantum dots solar cell,” Jiang Wu, Y. F. M. Makableh, R. Vasan, M. O. Manasreh, B. Liang, C. J. Reyner, and D. L. Huffaker, Appl. Phys. Lett. 100, 051907, (2012). http://dx.doi.org/10.1063/1.3681360
        24.  “Influence of template type and buffer strain on structural properties of GaN multilayer quantum wells grown by PAMBE, an x-ray study,” V. P. Kladko, A. V. Kuchuk, N. V. Safryuk, V. F. Machulin, P. M. Lytvyn, V. G. Raicheva, A. E. Belyaev, Yu. I. Mazur, E. A. DeCuir, Jr.; M. E. Ware, M. O. Manasreh, G. J. Salamo, Journal of Physics D 44, 025403-8 (2011). http://dx.doi.org/10.1088/0022-3727/44/2/025403
        25. System for spectral Characterization of Solar Cell Structures,” R. Ciocan, D. Han, D. Assalone, Z. Li, E. Ciocan, M. Lloyd, T. Moriarty, K.  Emery, J. Wu, S. Lee, S. Mangham, R. Vanga, M. O. Manasreh, Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE. 001734–001738 (2011).  http://dx.doi.org/10.1109/PVSC.2011.6186289
        26.  “Photoluminescence plasmonic enhancement in InAs quantum dots coupled to gold nanoparticles,” Jiang Wu, Seungyong Lee, V. R. Reddy, M. O. Manasreh, B. D. Weaver, M. K. Yakes, C. S. Furrow, Vas.  P. Kunets, M. Benamara, and G. J. Salamo, Materials Letters 65, 3605-3608 (2011).  http://dx.doi.org/10.1016/j.matlet.2011.08.019
        27.  “Intrasubband transitions in cubic AlN/GaN superlattices for detectors from near to far infrared,” Christian Mietze, E.A. DeCuir, Jr., M.O. Manasreh, K. Lischka, and D.J. As, Phys. Stat. Solid. (c) 8, 1204–1207 (2011), http://dx.doi.org/ 10.1002/pssc.201000838
        28. “Band offset between cubic GaN and AlN from intra- and interband spectroscopy of superlattices,” C. Mietze, E.A. DeCuir, Jr., M.O. Manasreh, K. Lischka and D.J. As, AIP Conf. Proc. 1292, 169-172 (2010). http://dx.doi.org/10.1063/1.3518288
        29.  “Optical absorption of proton irradiated colloidal CdSe/ZnS core/shell nanocrystals,” K. Y. Narsingi, M. O. Manasreh, and B. D. Weaver, IEEE Transactions on Nuclear Science 57, 2929-2932 (2010).  http://dx.doi.org/10.1109/TNS.2010.2062199
        30. "InGaAs Quantum Well Grown on High Index Surfaces for Superluminescent Diode Applications" Zhenhua Li, Jiang Wu, Zhiming M. Wang, Dongsheng Fan, Aqiang Guo, Shibing Li, Shui-Qing Yu, Omar Manasreh, and Gregory J. Salamo, Nanoscale Research Letters 5, 1079-2084 (2010). http://dx.doi.org/10.1007/s11671-010-9605-2
        31.  “Intersublevel Infrared Photodetector with Strain-Free GaAs Quantum Dot Pairs Grown by High-Temperature Droplet Epitaxy,” J. Wu, D. Shao, V.G. Dorogan, A.Z. Li, S. Li, E.A. DeCuir, Jr., M.O. Manasreh, Z.M. Wang, Yu. I. Mazur and G.J. Salamo, Nano Letters, 10, pp. 1512-1516, 2010.  http:/dx.doi.org/10.1021/nl100217k
        32. Quantum Ring Infrared Photodetector Based On Droplet Epitaxy Technique,” Dali Shao, Jiang Wu, Zhenhua Li, Omar Manasreh, Vasyl P. Kunets, Zhiming Wang, Gregory Salamo, Material Research Society, Boston, MA Nov 26 – Dec 02, 2009, Vol. 1208, Paper No. O09.24. http://dx.doi.org/10.1557/PROC-1208-O09-24
        33. Photodetectors fabricated from strain-free GaAs coupled quantum dots,” Jiang Wu, Dali Shao, Zhenhua Li, Omar Manasreh, Vasyl P. Kunets, Zhiming Wang, Gregory Salamo, Material Research Society, Boston, MA Nov 26 – Dec 02, 2009, Vol. 1208, Paper No. O04.04. http://dx.doi.org/10.1557/PROC-1208-O04-04
        34. Inter- and intrasubband spectroscopy of cubic AlN/GaN superlattices grown by molecular beam epitaxy on 3C-SiC,” C. Mietze, E.A. DeCuir, Jr., M.O. Manasreh, K. Lischka, and D.J. As, Phys. Stat. Solid. C, 7, No. 1, 64–67 (2010). http://dx.doi.org/10.1002/pssc.200982612
        35. Intermediate-band material based on GaAs quantum rings for solar cells,” J. Wu, D. Shao, A.Z. Li, M.O. Manasreh, V.P. Kunets, Z.M. Wang, and G.J. Salamo, Appl. Phys. Lett. 95, 071908 (2009). http://dx.doi.org/10.1063/1.3211971
        36. Spectroscopy of shallow InAs/InP quantum wire nanostructures,” Yu. I. Mazur, V.G. Dorogan, O. Bierwagen, G.G. Tarasov, E.A. DeCuir, S. Noda, Z. Ya. Zhuchenko, M.O. Manasreh, W.T. Masselink, G.J. Salamo, Nanotechnology 20 065401 (2009). http://dx.doi.org/10.1088/0957-4484/20/6/065401
        37. Multicolor photodetector based on GaAs quantum rings grown by droplet epitaxy,” Jiang Wu, Zhenhua Li, Dali Shao, M. O. Manasreh, V. P. Kunets, Z. M. Wang, G. J. Salamo, and B. D. Weaver, Appl. Phys. Lett. 94 171102 (2009). http://dx.doi.org/10.1063/1.3126644 
        38. Quantum Ring Infrared Photodetector by Droplet Epitaxy,” Jiang Wu, Zhenhua Li, Dali Shao, Omar Manasreh, Zhiming Wang, and Gregory Salamo, Accepted at Nanotech conference and Expo 2009, Nanoelectronics and Photonics section, Houston, Texas. May 3-7, 2009. http://dx.doi.org/10.1557/PROC-1208-O09-24
        39. Broadband photoresponse from InAs quantum dots embedded in a graded well for visible to mid-infrared detection,”  Brandon S. Passmore, Jiang Wu, Eric A. DeCuir, Jr., Omar Manasreh, P. M. Lytvyn, Euclydes Marega Jr., Vasyl P. Kunets, G. J. Salamo,  published in Quantum Sensing and Nanophotonic Devices V, edited by Rengarajan Sudharsanan, Christopher Jelen, Proc. of SPIE Vol. 6900, 69000O, (2008). http://dx.doi.org/10.1117/12.762338
        40.  “Cubic GaN/AlN multiple quantum well photodetector,” E. A. DeCuir, Jr., M. O. Manasreh, E. Tschumak, J. Schörmann, D. J. As, and K. Lischka, Appl. Phys. Lett. 92, 201910-3 pages (2008). http://dx.doi.org/10.1063/1.2936279
        41. Growth of nonpolar cubic GaN/AlN multiple quantum wells with intersubband transitions for 1.5 μm applications,” D. J. As, J. Schömann, E. Tschumak, K. Lischka, E. A. DeCuir, and M. O. Manasreh, Phys. Stat. Sol. (c) 5, 2092-2095 (2008). http://dx.doi.org/10.1002/pssc.200778446
        42. Polarized Raman spectroscopy and X-ray diffuse scattering in InGaAs/GaAs(100) quantum-dot chains,” V. V. Strelchuk, Yu. I. Mazur, Zh. M. Wang, M. Schmidbauer, O. F. Kolomys, M. Ya. Valakh, M. O. Manasreh, G. J. Salamo, J Mater Sci: Mater Electron 19, 692 (2008). http://dx.doi.org/10.1007/s10854-007-9381-7 pp.692-698
        43. Optical absorption of proton irradiated colloidal CdSe/ZnS core/shell nanocrystals,” K. Y. Narsingi, M. O. Manasreh, and B. D. Weaver, IEEE Transactions on Nuclear Science 57, 2929-2932 (2010).  http://dx.doi.org/10.1109/TNS.2010.2062199
        44.  “Room Temperature Near-Infrared Photoresponse Based on Interband Transitions in In0.35Ga0.65As Multiple Quantum Dot Photodetector,” B. S. Passmore, Jiang Wu, M. O. Manasreh, V. P. Kunets, P. M. Lytvyn, and G. J. Salamo, IEEE Electron Device Letters 29, 224-227 (2008). http://dx.doi.org/10.1109/LED.2007.915371
        45. Enhanced photoluminescence from InAs/GaAs surface quantum dots by using a Si-doped interlayer,” B. L. Liang, Yu I. Mazur, Vasyl P. Kunets, Zhiming Wang, G. J. Salamo, E.A. DeCuir, Jr., B. Passmore and M. O. Manasreh
          Nanotechnology 19, 065705 (5 pages) (2008). http://dx.doi.org/10.1088/0957-4484/19/6/065705
        46. Excitonic band edges and optical anisotropy of InAs/InP quantum dot structures”, Yu. I. Mazur, S. Noda, G. G. Tarasov, V. G. Dorogan, G. J. Salamo, O. Bierwagen, W. T. Masselink, E. A. DeCuir, Jr., and M. O. Manasreh, J. Appl. Phys. 103, 054315-7 pages (2008). http://dx.doi.org/10.1063/1.2872781
        47. A voltage-tunable two-color InGaAs/AlGaAs quantum well infrared photodetector,” Brandon Passmore, Jie Liang, Da Zhuang, Omar Manasreh, Vasyl Kunets, Greg Salamo, Mater. Res. Soc. Symp. Proc. 959 M17-14 (2007). http://dx.doi.org/10.1557/PROC-0959-M17-14
        48. 1.37 - 2.90 Micron Intersubband Transitions in GaN/AlN Superlattices,” Eric Anthony DeCuir, Jr., Emil Fred, Omar Manasreh, Jinqiao Xie, Hadis Morkoc, Esther Baumann, Daniel Hofstetter, Mater. Res. Soc. Symp. Proc. 955 I13-01 (2007). http://dx.doi.org/10.1557/PROC-0955-I13-01
        49. Dual broad-band photodetector based on interband and intersubband transitions in InAs quantum dots embedded in graded InGaAs quantum wells,” B. S. Passmore, Jiang Wu, M. O. Manasreh, and G. J. Salamo, Appl. Phys. Lett. 91, 233508-3 (2007). http://dx.doi.org/10.1063/1.2822412
        50. Multi-color Photoresponse Based on Interband and Intersubband Transitions in InAs and InGaAs Quantum Dot Photodetectors,” B. S. Passmore, J. Wu, E. A. Decuir, Jr., M. O. Manasreh, P. M. Lytvyn, E. Marega, Jr., Vas. P. Kunets, G. J. Salamo, Materials Research Society Fall Meeting, Boston, MA (2007), Vol. 1055, Paper No. GG02.02. http://dx.doi.org/10.1557/PROC-1055-GG02-02 
        51. Near Infrared Intersubband Absorption in Cubic GaN/AlN Superlattices,” E. A. DeCuir, Jr, E. Fred, M. O. Manasreh, J. Schörmann, D.J. As, K. Lischka, Materials Research Society Fall Meeting, Boston, MA (2007), Vol. 1055, Paper No. GG13.02. http://dx.doi.org/10.1557/PROC-1055-GG13-02
        52. Proton Irradiation Effect on CdSe-ZnS Core-Shell Nanocrystals Embedded in Ultra Violet Curable Resin”, K. Y. Narsingi, M. O. Manasreh, and B. D. Weaver. IEEE Region 5 Technical Conference, Fayetteville, Arkansas, April 20-21, 2007. http://dx.doi.org/10.1109/TPSD.2007.4380403
        53. Intersubband Transitions in Quantum Wells Infrared Photodetector”; Jiang Wu, Brandon Passmore, and M. O. Manasreh, IEEE Region 5 Technical Conference, Fayetteville, Arkansas, April 20-21, 2007. http://dx.doi.org/10.1109/TPSD.2007.4380350
        54. Near-infrared Intersubband Absorption in Non-polar Cubic GaN/AlN Superlattices”, E. A. DeCuir Jr, E. Fred, M. O. Manasreh, J. Schörmann, D.J. As, and K. Lischka, Appl. Phys. Lett. 91, 041911 (2007). http://dx.doi.org/10.1063/1.2764557
        55. Photoluminescence properties of InAs/GaAs heterostructure with surface quantum dots sitting on multiple-layer buried quantum dots.” Baolai Liang, Zhiming Wang, Yuriy I. Mazur, Eric A DeCuir, Jr., Omar Manasreh, and Gregory J. Salamo, Materials Research Society, 2006 Fall Meeting. Paper # M15.5.
        56. Optical properties of colloidal CdSe/ZnS core/shell nanocrystals embedded in a UV curable resin.” A. Joshi. E. A. Davis, K. Y. Narsingi, M. O. Manasreh, and W. D. Weaver. Materials Research Society, 2006 Fall Meeting. Paper # M6.4. http://dx.doi.org/10.1557/PROC-0959-M06-04
        57. A voltage tunable two-color InGaAs/AlGaAs quantum well infrared photodetector.” Brandon S. Passmore, Jie Liang, Da Zhuang, M. O. Manasreh, Vasyl P. Kunets, Greg J. Salamo. Materials Research Society, 2006 Fall Meeting. Vol. 0959, Paper No. M17.14. http://dx.doi.org/10.1557/PROC-0959-M17-14
        58. 1.37 - 2.90 micron Intersubband transitions in GaN/AlN superlattices.” E.A. DeCuir, Jr., Emil Fred, Omar Manasreh, Jinqiao Xie, Hadis Morkoc, Esther Baumann, Daniel Hofstetter. Materials Research Society, 2006 Fall Meeting. Vol. 0955, Paper No. I13.01. http://dx.doi.org/10.1557/PROC-0955-I13-01
        59. Temperature dependence of the band gap of colloidal CdSe/ZnS core/shell nanocrystals embedded into an ultraviolet curable resin,” A. Joshi, K. Y. Narsingi, M. O. Manasreh, E. A. Davis, and B. D. Weaver, Appl. Phys. Lett. 89, 131907(2006). http://dx.doi.org/10.1063/1.2357856 
        60. Near-infrared wavelength intersubband transitions in GaN/AlN short period superlattices,” E. A. DeCuir, Jr., Emil Fred, B. S. Passmore, A. Muddasani , M. O. Manasreh, Jinqiao Xie, Hadis Morkoç, M. E. Ware, and G. J. Salamo, Appl. Phys. Lett. 89, 151112 (2006). http://dx.doi.org/10.1063/1.2358929 
        61. Optical properties of colloidal InGaP/ZnS core/shell nanocrystals,” A. Joshi, M. O. Manasreh, E. A. Davis, and B. D. Weaver, Appl. Phys. Lett. 89, 111907 (2006). http://dx.doi.org/10.1063/1.2354031
        62. Correlation between surface and buried InAs quantum dots,” B. L. Liang, Zh. M. Wang, Yu. I. Mazur, G. J. Salamo, E. A. Decuir, Jr., and M. O. Manasreh, Appl. Phys. Lett. 89, 043125 (2006).  http://dx.doi.org/10.1063/1.2243865
        63. Investigation of indium distribution in InGaAs/GaAs quantum dot stacks using high-resolution x-ray diffraction and Raman scattering,” Yu. I. Mazur, Zh. M. Wang, G. J. Salamo, V. V. Strelchuk, V. P. Kladko, V. F. Machulin, M. Ya. Valakh, and M. O. Manasreh, J. Appl. Phys. 99, 023517-1 (2006). http://dx.doi.org/10.1063/1.2163009 
        64. Investigation of rapid thermal annealing on Cu(In,Ga)Se2 films and solar cells,” X. Wang, S. S. Li, K. W. Kim, S. Yoon, V. Cracium, J. M. Howard, M. O. Manasreh, O. D. Crisalle, and T. J. Anderson, Journal of Solar Energy Materials and Solar cells 90, 2855-2866 (2006). http://dx.doi.org/10.1016/j.solmat.2006.04.011
        65. Broadband photoresponse from InAs quantum dots embedded in InGaAs graded well,” J. Liang, M. O. Manasreh, E. Marega, Jr., and G. J. Salamo, IEEE Electron Device Letters Vol. 26, 631-633, (2005). http://dx.doi.org/10.1109/LED.2005.854392
        66. Intersubband transitions in proton irradiated InGaAs/GaAs multiple quantum dots,” Y. C. Chua, E. A. DeCuir, Jr., M. O. Manasreh, and B. D. Weaver, Appl. Phys. Lett. 87, No. 9, 091905 (2005). http://dx.doi.org/10.1063/1.2035877 
        67. Investigation of pulsed laser annealing (PLA) and rapid thermal annealing (RTA) of CIGS films and solar cells,” Xuege Wang, Sheng. S. Li, V. Craciun, W. K. Kim, S. Yoon, J. M. Howard, M. O. Manasreh, J.Venturini, O. D. Crisalle, and T. J. Anderson. IEEE 31st Photovoltaic Specialists Conference (PVSC), Orlando, Florida (January 2005). http://dx.doi.org/10.1109/PVSC.2005.1488152
        68. Proton irradiation effect on single-wall carbon nanotubes in a poly(3-octylthiophene) matrix” P. P. Neupane and M. O. Manasreh, B. D. Weaver, R.P. Rafaelle, and B.J. Landi, Appl. Phys. Lett. 86, 221908-22190 (2005). http://dx.doi.org/10.1063/1.1940721 
        69. Intersubband transitions in GaN/AlxGa1-xN multi quantum wells,” E.A. Decuir, Jr., Y.C. Chua, B.S. Passmore, J. Liang, M.O. Manasreh, J. Xie, H. Morkoç, A. Asghar, A. Payne, and I.T. Ferguson, Materials Research Society, (2005), Vol. 829, Paper No. B2.29. http://dx.doi.org/10.1557/PROC-829-B2.29
        70. Spectroscopic analysis of external stresses in semiconductor
          quantum-well materials
          ,” Jens W. Tomm, Mark L. Biermann, B. S. Passmore, M. O. Manasreh, A. Gerhardt, and Tran Q. Tien, Materials Research Society, (2005) Vol. 829, Paper No. B04.04. http://dx.doi.org/10.1557/PROC-829-B4.4 
        71. Intersubband Transitions in In0.3Ga0.7As/GaAs Multiple Quantum Dots of Varying Dot-Sizes,” Y.C. Chua, Jie Liang, B.S. Passmore, E.A. Decuir, Jr., M.O. Manasreh, Zhiming Wang, and G.J. Salamo, Materials Research Society, (2005), Vol. 829, Paper No. B01.04. 2005_02.pdf
        72. Longitudinal Modes in InAlGaAs/GaAs High-Power Laser Diodes,” B.S. Passmore, Y.C. Chua, M.O. Manasreh, and J.W. Tomm, Materials Research Society, (2005), Vol. 829, Paper No. B02.08. http://dx.doi.org/10.1557/PROC-829-B2.8 
        73. Tuning In0.3Ga0.7As/GaAs multiple quantum dots for long wavelength infrared detectors”,Ying Chao Chua, E. A. Decuir, Jr., B. S. Passmore, K. H. Sharif, and M. O. Manasreh, Z. M. Wang and G. J. Salamo, Appl. Phys. Lett. 85, 1003-1005 (2004). Selected for Virtual Journal of Nanoscale Science & Technology--August 16, Vol. 10, Issue 7 (2004) http://www.vjnano.org http://dx.doi.org/10.1063/1.1777822 
        74. Determination of the carrier concentration in InGaAsN/GaAs single quantum wells using Raman scattering,” Patrick. A. Grandt, Aureus E. Griffith, M. O. Manasreh, D. J. Friedman,S. Doğan, and D. Johnstone, Appl. Phys. Lett. 85, 4905-4907 (2004). http://dx.doi.org/10.1063/1.1823014
        75. Infrared Optical Absorbance of Intersubband Transitions in GaN/AlGaN Multiple Quantum Well Structures.” Qiaoying Zhou, B. Pattada, Jiayu Chen, M. O. Manasreh, Faxian Xiu, Steve Puntigan, L. He, K. S. Ramaiah, and Hadis Morkoç, J. Appl. Phys. 94, 10140-10142 (2003). http://dx.doi.org/10.1063/1.1577809
        76. Optical Absorption of Intersubband Transitions in In0.3Ga0.7As/GaAs Multiple Quantum Dots.” B. Pattada, Jiayu Chen, Qiaoying Zhou, M. O. Manasreh, M. Hussien, W. Ma, and G. J. Salamo, Appl. Phys. Lett. 82, 2509-2511 (2003). http://dx.doi.org/10.1063/1.1567813
        77. Intersubband transitions in Proton Irradiated InGaAs/InAlAs, Multiple Quantum Wells Grown on Lattice Matched InP Substrate.” Qiaoying Zhou, M.O. Manasreh, B.D. Weaver, and M. Missous, Materials Research Society, (2003), Vol. 744, Paper No. M05.37. http://dx.doi.org/10.1557/PROC-744-M5.37
        78. Intersubband Transitions in InxGa1-xAs/AlGaAs Multiple Quantum Wells for Long Wavelength Infrared Detection.” Clayton L. Workman, Zhiming Wang, Wenquan Ma, Christi E. George, R. Panneer Selvam, Gregory J. Salamo, Qiaoying Zhou, and M.O. Manasreh, Material Research Society, Materials Research Society, (2003), Vol. 744, Paper No. M09.07. http://dx.doi.org/10.1557/PROC-744-M9.7
        79. Interband transitions in GaInNAs/GaAs Single Quantum Wells”, M.O. Manasreh, D.J. Friedman, W.Q. Ma, C.L. Workman, C.E. George, and G.J. Salamo, Materials Research Society, (2003), Vol. 744, Paper No. M10.04. http://dx.doi.org/10.1557/PROC-744-M10.4
        80. Phonon Modes of GaN/AlN Heterojunction Field Effect Transistor Structures Grown on Si(111) Substrates.” B. Pattada, Jiayu Chen, M. O. Manasreh, S. Guo, and B. Peres, J. Appl. Phys. 93, 5824-5826 (2003). Rapid Communication. http://dx.doi.org/10.1063/1.1561583
        81. Photoluminescence of Metalorganic Chemical Vapor Deposition Grown GaInNAs/GaAs Single Quantum Wells.” M. O. Manasreh, D. J. Friedman, W. Q. Ma, C. L. Workman, C. E. George, and G. J. Salamo, Appl. Phys. Lett. 82, 514-516 (2003). http://dx.doi.org/10.1063/1.1540731
        82. Intersubband Transitions in Proton Irradiated InGaAs/InAlAs Multiple Quantum Wells Grown on Semi-insulating InP Substrates.” Qiaoying Zhou, M. O. Manasreh, B. D. Weaver, and M. Missous, Appl. Phys. Lett. 81, 3374-3376 (2002). http://dx.doi.org/10.1063/1.1519726
        83. Ion-Beam-Produced Damage and its Stability in AlN Films.” S. O. Kucheyev, J. S. Williams, J. Zhou, C. Jagadish, , M. Pophristics, S. Guo, I. T. Ferguson, and M. O. Manasreh, J. Appl. Phys. 92, 3554 (2002). http://dx.doi.org/10.1063/1.1501746 
        84. Response to ‘Comment on “Thermal Annealing Efect on the Intersublevel Transitions in InAs Quantum Dots [Appl. Phys. Lett. 78, 2196 (2001)]”” Y. Berhane, M. O. Manasreh, H. Yang, and G. J. Salamo, Appl. Phys. Lett. 80, 4869-4870 (2002). http://dx.doi.org/10.1063/1.1363693
        85. Intersubband Transitions in InGaAs/InAlAs Multiple Quantum Wells Grown on InP Substrate.” Qiaoying Zhou, M.O. Mansreh, B.D. Weaver, and M. Missous, Materials Research Society, (2002), Vol. 692, Paper No. H06.25. http://dx.doi.org/10.1557/PROC-692-H6.25.1
        86. Localized Vibrational Modes of Carbon-Hydrogen Complexes in MOCVD Grown GaN and AlGaN thin films.” J. Chen, Q. Zhou, Y. Berhane, M.O. Manasreh, C.A. Tran, M. Pophristi and, I.T. Ferguson, Materials Research Society, (2002), Vol. 639, Paper No. G03.01. http://dx.doi.org/10.1557/PROC-639-G3.1
        87. Thermal Annealing Effect on Carbon-Hydrogen LVMs in AlGaN.” M.O. Manasreh and B.D. Weaver, Materials Research Socity, (2002), Vol. 692, Paper No. H10.04. http://dx.doi.org/10.1557/PROC-692-H10.4.1
        88. Optical Absorption of Nitrogen Vacancy in Proton Irradiated AlxGa1-xN Thin Films.” Q. Zhou, M.O. Manasreh, M. Pophristic, I.T. Ferguson and B.D. Weaver, Materials Research Society, (2002), Vol. 693, Paper I06.32. http://dx.doi.org/10.1557/PROC-693-I6.32.1
        89. Thermal Annealing Effect on Nitrogen Vacancy in Proton Irradiated AlGaN.” Qiaoying Zhou and M. O. Manasreh, Appl. Phys. Lett. 80, 2072-2074 (2002). http://dx.doi.org/10.1063/1.1463703
        90. Structural Disorder in Ion-Implanted AlGaN.” S. O. Keucheyev, S. J. Williams, J. Zou, G. Li, C. Jagadish, M. O. Manasreh, P. Pophristic, S. Guo, and I. T. Ferguson. Appl. Phys. Lett. 80, 787-789 (2002). http://dx.doi.org/10.1063/1.1445478 
        91. Observation of Nitrogen Vacancy in AlxGa1-xN thin films.” Q. Zhou, M. O. Manasreh, M. Pophristic, and I. Ferguson, Appl. Phys. Lett. 79, 2901-2903 (2001). http://dx.doi.org/10.1063/1.1415422 
        92. Thermal Annealing Effect on Intersublevel Transitions in InAs Quantum dots.” Y. Berhane, M. O. Manasreh, H. Yang, and G. J. Salamo, Appl. Phys. Lett. 78, 2196-2198 (2001). http://dx.doi.org/10.1063/1.1363693
        93. Proton and He+-ion Radiation Effect on Intersubband transitions in GaAs/AlGaAs Multiple Quantum Wells.” Y. Berhane, M. O. Manasreh, B. D. Weaver, H. H. Tran, and C. Jagadish, SPIE Proceedings, Vol 4454, p.85-93 (2001) (Invited). http://dx.doi.org/10.1117/12.448163
        94. He+-Ion Irradiation Effect on Intersubband Transitions in GaAs/AlGaAs Multiple Quantum Wells.” Y. Berhane, M. O. Manasreh, and B. D. Weaver, J. Appl. Phys. 89, 3517-3519 (2001), Rapid Communication. http://dx.doi.org/10.1063/1.1346997
        95. Disorder-Effects in Reduced Dimensional and Quantum Electronics.” B. D. Weaver, R. Magno, E. M. Jackson, R. Wilkins, S. Shojah-Ardalan, A. C. Seabaugh, B. Brar, M. O. Manasreh, and Y. Berhane, AIP Conference Proceedings Vol. 552, 1210-1216 (2001) (Invited). http://dx.doi.org/10.1063/1.1358074
        96. Optical Absorption of Doped and Undoped Bulk SiC.” K. Miller, Q. Zhou, J. Chen, M.O. Manasreh, Z.C. Feng, and I. Ferguson, Materials Research Society, Vol. 640, Paper No. H05.23 (2001). http://dx.doi.org/10.1557/PROC-640-H5.23
        97. Carbon-Hydrogen Complexes in Metalorganic Chemical Vapor Deposition Grown GaN.” M. O. Manasreh, C. A. Tran, and I. Ferguson, Materials Research Society, Vol. 639, Paper G03.01, (2001) 2001_01.pdf
        98. Thermal Annealing Recovery of Intersubband Transitions in Proton Irradiated GaAs/AlGaAs Multiple Quantum Wells.” F. Hegeler, M. O. Manasreh, C. Morath, P. Ballet, H. Tang, G. J. Salamo, H. H. Tan, and C. Jagadish, Appl. Phys. Lett. 77, 2867-2869 (October 2000). http://dx.doi.org/10.1063/1.1320846
        99. Introduction to Defects and Structural Properties of III-Nitride Semiconductors.” M. O. Manasreh in “III-Nitride Semiconductors: Defects and Structural Properties” (Elsevier, Amsterdam, The Netherlands, 2000), chapter 1, pp 1- 23. http://dx.doi.org/10.1016/B978-044450630-6/50002-7
        100. Introduction to InP and related Compounds.” M. O. Manasreh, in “Optoelectronic Properties of Semiconductors and Superlattices”, (Gordon & Breach, Newark, NJ, 2000), Vol. 9, chapter one, pp.1-7.
        101. Photoluminescence Measurements of Interband Transition in Fast Neutron Irradiated In0.07Ga0.93As/Al0.4Ga0.6As Multiple Quantum Wells.” M.O. Manasreh and S. Subramanian, Materials Research Society, Vol. 607, 525 - 528 (2000). http://dx.doi.org/10.1557/PROC-607-525
        102. Degradation of Intersubband Transitions in Electron Irradiated GaAs/AlGaAs Multiple Quantum Wells with Superlattice Barriers.” C.P. Morath, M.O. Manasreh, H.S. Gingrich, H.J von Bardeleben, P. Ballet, J.B. Smathers, and G.J. Salamo, Materials Research Society, Vol. 607, 503 - 508 (2000). http://dx.doi.org/10.1557/PROC-607-503
        103. Thermal Annealing Recovery of Intersubband Transition in Proton-Irradiated GaAs/Al0.3Ga0.7As Multiple Quantum Wells.” H.S. Gingrich, C. Morath, M.O. Manasreh, P. Ballet, J.B. Smathers, G.J. Salamo, and C. Jagadish, Materials Research Society, Vol. 607, 217-222 (2000). http://dx.doi.org/10.1557/PROC-607-217
        104. “Introduction.” M. O. Manasreh, in “Optoelectronic Properties of Semiconductors and Superlattices”, (Gordon & Breach, Newark, NJ, 1997), Vol. 3, chapter one, pp.1-5.
        105. Intersubband Transitions in InGaAs/AlGaAs Multiple Quantum Wells and Their Behavior Under Proton and Electron Irradiation.” M.O. Manasreh, P. Ballet, J.B. Smathers, G.J. Salamo, C. Jagadish, and H.J. von Bardeleben, the 5th International Conference on Intersubband Transitions in Quantum Wells, Bad Ischl, Austria, September 7-11 (1999).
        106. Localized Vibrational Modes of Carbon-Hydrogen Complexes in GaN.” M. O. Manasreh, J. M. Baranowski, K. Pakula, H. X. Jiang and Jingyu Lin, Appl. Phys. Lett. 75, 659-661 (1999). http://dx.doi.org/10.1063/1.124473
        107. Proton Irradiation Effects on the Intersubband Transition in GaAs/AlGaAs Multiple Quantum Wells with Bulk or Superlattice barriers.” M. O. Manasreh, P. Ballet, J. B. Smathers, G. J. Salamo, and C. Jagadish, Appl. Phys. Lett. 75, 525-527 (1999).  http://dx.doi.org/10.1063/1.124436
        108. Electron Irradiation Effects on the Intersubband Transitions in InGaAs/AlGaAs Multiple Quantum Wells.” M. O. Manasreh, H. J. von Bardeleben, A. M. Mousalitin, and D. R. Khokhlov, J. Appl. Phys. 85, 630-632 (1999). Rapid Communication. http://dx.doi.org/10.1063/1.369419
        109. Two and Three Color Infrared Detection with In GaAs/A1GaAs Double and Triple-Coupled Quantum Wells.” A Stead, M Missous, M O Manasreh, Presented at SIOE '99 Conference on Semiconductor and Integrated Optoelectronics Conference, University of Wales, CARDIFF, Wales, 7-9 April 1999.
        110. Structural and Optical Properties of Multiple Quantum Well Compressively Strained In0.1Ga0.9As/Al0.33Ga0.67As Superlattices Grown by Molecular Beam Epitaxy for Infrared Detection in the 6-13 μm Spectral Range.” A. Stead, M. Missous, and M. O. Manasreh, Electron Devices for Microwave and Optoelectronic (EDMO) Workshop, UMIST, Manchester, UK, 23-24 Nov 1998.
        111. Overview of Quantum Well Infrared Detectors.” M. O. Manasreh and M. Missous, Symposium K1: Light Emitting Devices for Optoelectronic Applications. The 193rd Meeting of the Electrochemical Society, San Diego, CA, 3-8 May 1998. Invited.
        112. γ-Ray Irradiation Effect on the Intersubband Transition in InGaAs/AlGaAs Multiple Quantum Wells.” M.O. Manasreh, J.R. Chavez, W.T. Kemp, K. Hoenshel, and M. Missous, Materials Research Society, Vol. 484, 637-641 (1998). http://dx.doi.org/10.1557/PROC-484-637
        113. Quantum Well Infrared Photodetectors.” M. O. Manasreh, M. Missous, A. Stead, C. Jelen, and M. Razeghi, The Fifth International Symposium On Long Wavelength Infrared Detectors and Arrays: Physics and Applications V, The 192nd Meeting of the Electrochemical Society, Paris, France,1- 5 Sept. 1997. Volume 97-33, pp. 69-80 (1997). Invited.
        114. Exchange Interaction Effect on the Dark Current in n-Type GaAs/AlGaAs Multiple Quantum Wells Infrared Detectors.” D. H. Huang and M. O. Manasreh, J. Appl. Phys. 81, 1305-1310 (1997). http://dx.doi.org/10.1063/1.363910
        115. Theoretical Studies of Electronic Intersubband Transitions in n-Type Doped Quantum Wells for Infrared Photodetector Applications.” D. Huang and M.O. Manasreh, Materials Research Society, Vol. 450, 173-187 (1997), (invited). http://dx.doi.org/10.1557/PROC-450-173
        116. Intersubband Transitions in Triple-Coupled Quantum Wells for Three-Colors Infrared Detectors.” D. Huang and M. O. Manasreh, J. Appl. Phys. 80, 6045-6049 (1996). http://dx.doi.org/10.1063/1.363561
        117. Reply to ‘Comment on “Many-body Analysis of the Effects of Electron Density and Temperature on the Intersubband Transition in AlxGa1-xAs/GaAs Multiple Quantum Wells.” M. Zaluzny, Phys. Rev. B 54, 10978-10979, (1996)’ ”, D. Huang, M. O. Manasreh, and G. Gumbs, Phys. Rev. B 54, 10980-10981 (1996). http://dx.doi.org/10.1103/PhysRevB.54.10980
        118. Recent Developments of Ultraviolet Materials Based on GaN and related materials for Remote Sensing.” M. O. Manasreh and D. H. Huang, SPIE Proceedings, Vol 2831, pp. 252 - 258 (1996). (Invited).
        119. Temperature Dependence of the Absorption Band Gap Edge of GaN.” M. O. Manasreh and A. K. Sharma, Materials Research Society, Vol. 395, 553-557 (1996). http://dx.doi.org/10.1557/PROC-395-553 
        120. Intersubband Transitions in Strained In0.07Ga0.93As/Al0.4Ga0.6As Multiple Quantum Wells and Their Application to Two-Colors Photodetectors.” D. H. Huang and M. O. Manasreh, Phys. Rev. B 54, 5620-5628 (1996). http://dx.doi.org/10.1103/PhysRevB.54.5620
        121. Effects of the Screened Exchange Interaction on the Tunneling and Landau Gaps in Double Quantum Wells.” D. Huang and M. O. Manasreh, Phys. Rev. B 54, 2044-2048 (1996). http://dx.doi.org/10.1103/PhysRevB.54.2044
        122. Optical Absorption Near the Band Edge in GaN Grown by Metalorganic Chemical Vapor Deposition.” M. O. Manasreh, Phys. Rev. B 53, 16425-16428 (1996). http://dx.doi.org/10.1103/PhysRevB.53.16425
        123. Many-body Analysis of the Effects of Electron Density and Temperature on the Intersubband Transition in AlxGa1-xAs/GaAs Multiple Quantum Wells.” D. Huang, G. Gumbs, and M. O. Manasreh, Phys. Rev. B 52, 14126-14130 (1995). http://dx.doi.org/10.1103/PhysRevB.52.14126
        124. Theoretical Modeling of the Intersubband Transitions in Al0.3Ga0.7As/GaAs Semiconductor Quantum Wells.” M. O. Manasreh, D. Huang, and G. Gumbs, presented and published in The Proceedings of the Third International Symposium On Long Wavelength Infrared Detectors and Arrays: Physics and Applications III, The Electrochemical Society, Volume 95-28, pp. 240-257 (1995). Invited.
        125. Quantum Wells and Superlattices for Space-Based Long Wavelength Infrared Photodetectors.” A. Singh and M. O. Manasreh, SPIE, vol. 2397, 193-209 (1995). Invited. http://dx.doi.org/10.1117/12.206869
        126. "Temperature Dependence of the Direct Energy Gap and Donor-Acceptor Transition Energies in Be-Doped GaAsSb Lattice Matched to InP." K. G. Merkel, V. M. Bright, M. Marciniak, C. L. A. Cerny, and M. O. Manasreh, Appl. Phys. Lett. 65, 2442-2444 (1994). http://dx.doi.org/10.1063/1.112701 
        127. "Temperature and Many-Body Effects on the Intersubband Transition in a GaAs/ Al0.3Ga0.7As Multiple Quantum Wells." F. Szmulowicz, M. O. Manasreh, C. E. Stutz, and T. Vaughan, Phys. Rev. B 50, 11618 - 11623 (1994). http://dx.doi.org/10.1103/PhysRevB.50.11618
        128. "Moving Photoluminescence Bands in GaAs1-xSbx layers Grown by Molecular Beam Epitaxy on InP Substrates." P. W. Yu, C. E. Stutz, M. O. Manasreh, R. Kaspi, and M. A. Capano, J. Appl. Phys. 76, 504-508 (1994). http://dx.doi.org/10.1063/1.357102
        129. "Alloy Dependence of the Carrier Concentration and Negative Persistent Photoconductivity in Ga1-xAlxSb/InAs/Ga1-xAlxSb Single Quantum Wells." H. J. von Bardeleben, M. O. Manasreh, and C. E. Stutz, Materials Science Forum, Vol. 143/147, 611 (1994). http://dx.doi.org/10.4028/www.scientific.net/MSF.143-147.611
        130. "Intersubband Transitions in In0.07Ga0.93As/Al0.4Ga0.6As Multiple Quantum Wells." F. Szmulowicz, M. O. Manasreh, C. Kutsche, and C. E. Stutz, Materials Research Society, Vol. 299, 53-58 (1994). http://dx.doi.org/10.1557/PROC-299-53
        131. "Temperature and Polarization Dependence of the Optical Absorption in ZnGeP2 at 2 micrometers." M. Shah, D.W. Fischer, M.C. Ohmer, N.C. Fernelius, M.O. Manasreh, P.G. Scunemann and T.M. Pollack, Materials Research Society, Vol. 325, 463 - 468 (1994). http://dx.doi.org/10.1557/PROC-325-463
        132. "Band Edge Optical Absorption of Molecular Beam Epitaxial GaSb Grown on Semi-insulating GaAs Substrate." M. Shah, M.O. Manasreh, R. Kaspi, M.Y. Yen, B.A. Philips, M. Skowronski, and J. Shinar, Materials Research Society, Vol. 325, 449 - 455 (1994). http://dx.doi.org/10.1557/PROC-325-449
        133. "Oxygen Doping of GaAs During OMVPE Controlled Introduction of Impurity Complexes." Y. Park, M. Skowronski, T.S. Rosseel, and M.O. Manasreh, Materials Research Society, Vol. 325, 293 - 303 (1994). (Invited). http://dx.doi.org/10.1557/PROC-325-293 
        134. "Calculation and Measurement of the Electron Density and Temperature Dependence of the Intersubband Absorption in n-type GaAs/Al0.3Ga0.7As Multiple Quantum Wells." F. Szmulowicz, T. Vaughan, M. O. Manasreh, and C. E. Stutz, 21st International Conference on Physics of Semiconductors, edited by P. Jiang and H.-Z. Zheng, (World Scientific, 1993), vol. 1, pp. 733-736.
        135. "Additional H-Related Local Vibrational Modes in Proton-Implanted InP." D. W. Fischer, M. O. Manasreh, and G. Matous, Semicond. Sci. and Technol. 9, 1-4 (1994). http://dx.doi.org/10.1088/0268-1242/9/1/001
        136. Theory for the Oscillatory Cyclotron Resonance Effective Mass in a Heterostructure." G. Gumbs, D. Huang, C. Zhang, and M. O. Manasreh, J. Appl. Phys.75, 902-907 (1994). http://dx.doi.org/+10.1063/1.356445 
        137. "Infrared Studies of Be-Doped GaAs Grown by Molecular Beam Epitaxy at Low Temperatures." D. N. Talwar, M. O. Manasreh, C. E. Stutz, R. Kaspi, and K. R. Evans, J. Electronics Materials, Vol. 22, 1445-1448 (1993). http://dx.doi.org/10.1007/BF02649996 
        138. "Hydrogen-Iron Interaction in Proton-Implanted InP:Fe." D. W. Fischer, M. O. Manasreh, and G. Matous, Appl. Phys. Lett. 63, 3038-3039 (1993). http://dx.doi.org/10.1063/1.110251
        139. "Infrared Absorption of Localized Vibrational Modes of Silicon, Beryllium, and Aluminum in Low Temperature Molecular Beam Epitaxial GaAs." M. O. Manasreh, C. E. Stutz, J. S. Solomon, M. B. Mier, R. Kaspi, and K. R. Evans, in "Semi-insulating III-V materials, Ixtapa, Mexico 1992", edited by C. J. Miner, W. Ford, and E. R. Weber, (Institute of Physics Publishing, Bristol and Philadelphia, 1993), pp. 147 - 151.
        140. "Infrared Absorption in Proton- and Deuteron-Implanted Semi-insulating InP:Fe." D. W. Fisher, M. O. Manasreh, G. Matous, and S. J. Pearton, in "Semi-insulating III-V materials, Ixtapa, Mexico 1992", edited by C. J. Miner, W. Ford, and E. R. Weber, (Institute of Physics Publishing, Bristol , 1993), pp. 259 – 263.
        141. A Normal Incidence Type II Quantum Well Infrared Photodetector Using an Indirect AlAs/Al0.5Ga0.5As System Grown on [110] GaAs for the Mid- and Long-Wavelength Multispectrum Detection." Y. H. Wang, Sheng S. Li, P. Ho, and M. O. Manasreh, J. Appl. Phys. 74, 1382-1387 (1993). http://dx.doi.org/10.1063/1.354896
        142. "Phonon Coupling Associated with Free to Bound and Bound to Bound Transitions in Molecular Beam Epitaxial GaAs." D. C. Reynolds, D. N. Talwar, M. O. Manasreh, and C. E. Stutz, Phys. Rev. B 47, 13 304 - 13 308 (1993). http://dx.doi.org/10.1103/PhysRevB.47.13304
        143. "Hydrogen Complexes and their Vibrations in Proton and Deuteron Implanted InP: Theory and Experiment." D.N. Talwar, D.W. Fischer, M.O. Manasreh, and G. Matous, Materials Research Society, Vol. 291, 561-566 (1993). http://dx.doi.org/10.1557/PROC-291-561
        144. Optical Absorption of the Intersubband Transitions in GaAs/Al0.4Ga0.6As Multiple Quantum Wells with Superlattice Barriers." M. O. Manasreh, B. Jogai, C. E. Stutz, and D. C. Reynolds, J. Appl. Phys. 73, 3105-3107 (1993). Rapid Communication. http://dx.doi.org/10.1063/1.352998
        145. "Far-infrared Cyclotron Resonance of 2-Dimensional Electron gas in III-V Semiconductors Heterostructures." M.O. Manasreh, in Semiconductor Interfaces, Microstructures and Devices: Properties and Applications, edited by Z. C. Feng (Institute of Physics publishing, Bristol, UK, 1993), chapter 7, pp. 163-178.
        146. "Electron Paramagnetic Resonance Study of the Two Dimensional Electron Gas in Ga1-xAlxSb/InAs Single Quantum Wells." H. J. von Bardeleben, Y. Q. Jia, M. O. Manasreh, and C. E. Stutz, Appl. Phys. Lett. 62, 90 - 92 (1993). http://dx.doi.org/10.1063/1.108782
        147. "Isochronal Annealing of Local Vibrational Modes in Proton- and Deuteron-Implanted InP." D. W. Fischer, M. O. Manasreh, D. N. Talwar, and G. Matous, J. Appl. Phys.73, 78 - 83 (1993). http://dx.doi.org/10.1063/1.353832
        148. "Theoretical Modeling of the Intersubband Transitions in III-V Semiconductor Multiple Quantum Wells" J. P. Loehr and M. O. Manasreh, in "Semiconductor Quantum Wells and Superlattices for Long Wavelength Infrared Detectors", (Artech House, Boston, MA, 1993), chapter two. pp. 19 - 54.
        149. "Introduction to Long Wavelength Infrared Quantum Detectors" M. O. Manasreh and G. J. Brown, in "Semiconductor Quantum Wells and Superlattices for Long Wavelength Infrared Detectors", (Artech House, Boston, MA, 1993), chapter one. pp. 1 - 17.
        150. "Intersubband Optical Absorption in Heavily-Doped n-type GaAs/Al0.3Ga0.7As Multiple Quantum Wells." B. Jogai, M.O. Manasreh, C.E. Stutz, R.L. Whitney, and D.K. Kinell, Phys. Rev. B 46, 7208-7211 (1992). http://dx.doi.org/10.1103/PhysRevB.46.7208
        151. "Effect of Al Composition on the Deep Level Donors of AlxGa1-xSb/InAs Single Quantum Wells." I. Lo, W.C. Mitchel, C.E. Stutz, K.R. Evans and M.O. Manasreh, Materials Research Society, Vol. 262, 893-897 (1992). http://dx.doi.org/10.1557/PROC-262-893
        152. "Intersubband Infrared Absorption in a GaAs/Al0.3Ga0.7As Multiple Quantum Well." M. O. Manasreh, F. Szmulowicz, T. Vaughan, K. R. Evans, C. E. Stutz, and D. W. Fischer, in Intersubband Transitions in Quantum Wells , Edited by E. Rosencher, Børge Vinter, and B. Levine, NATO Series B: Physics Vol. 288 (Plenum Press, New York, 1992), pp.287 - 297. http://dx.doi.org/10.1063/1.104023
        153. "Comment on ‘Effect of Many-Body Corrections on Intersubband Transitions in GaAs/AlxGa1-xAs Multiple Quantum Wells” by B. Jogai, J. Vac. Sci. Technol. B9, 2473 (1991)." F. Szmulowicz and M. O. Manasreh, J. Vac. Sci. Technol. B10, 1341-1342 (1992). http://dx.doi.org/10.1116/1.585866
        154. "Incorporation of Silicon in Low Temperature Molecular Beam Epitaxial GaAs." M.O. Manasreh, K.R. Evans, C.E. Stutz, D.C. Look, and J. Hemsky, Materials Research Society, Vol. 241, 27 - 31 (1992). http://dx.doi.org/10.1063/1.107031
        155. "Electron Paramagnetic Resonance Study of Low Temperature Molecular Beam Epitaxy Grown GaAs and InP Layers." H. J. von Bardeleben, Y. Q. Jia, J. F. Hirtz, J. C. Garcia, M. O. Manasreh, C. E. Stutz, and K. R. Evans, Materials Research Society, Vol. 241, 69 - 74 (1992). http://dx.doi.org/10.1557/PROC-241-69
        156. "Indirect photoreflectance from high-electron-mobility transistor structures." M. Sydor, J. R. Engholm, M. O. Manasreh, K. R. Evans, C. E. Stutz, and W. C. Mitchel, Phys. Rev. B 45, 13796-13798 (1992). Rapid Communication. http://dx.doi.org/10.1103/PhysRevB.45.13796
        157. "Local Mode Spectroscopy of Proton- and Deuteron-Implanted InP." D. W. Fischer, M. O. Manasreh, and G. Matous, J. Appl. Phys. 71, 4805-4808 (1992). http://dx.doi.org/+10.1063/1.350621 
        158. "Incorporation of Silicon and Aluminum in Low Temperature Molecular Beam Epitaxial GaAs." M. O. Manasreh, K. R. Evens, C. E. Stutz, D. C. Look, and J. Hemsky, Appl. Phys. Lett. 60, 2377-2379 (1992). http://dx.doi.org/10.1063/1.350621
        159. "A Shubnikov - de Haas Study in the Strained AlGaSb/InAs/AlGaSb Quantum Wells." I. Lo, W. C. Mitchel, M. O. Manasreh, C. E. Stutz, and K. R. Evans, Electrochemical Society Meeting, Proceeding Volume 92-19, 162-168 (1992).
        160. "Spin Splitting and Effective Mass of the 2-Dimensional Electron Gas in an Al0.6Ga0.4Sb/InAs Single Quantum Well." M. O. Manasreh, G. Gumbs, C. Zhang, I. Lo, C.A. Bozada, R.W. Dettmer, C.E. Stutz, K.R. Evans, and W.C. Mitchel, Materials Research Society, vol. 240, 765-769 (1991). http://dx.doi.org/10.1557/PROC-240-765
        161. "Shubnikov - de Haas Studies of Negative Persistent Photoconductivity in Al0.6Ga0.4Sb/ InAs/Al0.6Ga0.4Sb Quantum wells." I. Lo, W.C. Mitchel, M.O. Manasreh, C.E. Stutz, and K.R. Evans, Materials Research Society, vol. 240, 759-764 (1991). http://dx.doi.org/10.1063/1.106558 
        162. "Effective Mass of the 2-Dimensional Electron gas in an Al0.6Ga0.4Sb/InAs Single Quantum Well." M. O. Manasreh, G. Gumbs, C. Zhang, C. E. Stutz, K. R. Evans, C. A. Bozada, I. Lo, and W. C. Mitchel, Superlattices and Microstructures 11, 423-427 (1992). http://dx.doi.org/10.1016/0749-6036(92)90200-O
        163. "Electron Paramagnetic Resonance Study of GaAs grown by Low Temperature Molecular Beam Epitaxy." H. J. von Bardeleben, M. O. Manasreh, D. C. Look, K. R. Evans, and C. E. Stutz, Phys. Rev. B 45, 3372-3375 (1992). http://dx.doi.org/10.1103/PhysRevB.45.3372
        164. "Negative Persistent Photoconductivity in the Al0.6Ga0.4Sb/InAs single quantum Wells." I. Lo, W.C. Mitchel, M.O. Manasreh, C.E. Stutz, and K.R. Evans, Appl. Phys. Lett. 60, 751-753 (1992). http://dx.doi.org/10.1063/1.106558
        165. "Electron Paramagnetic Resonance Studies of Low Temperature Molecular Beam Epitaxial GaAs Layers." H. J. von Bardeleben, Y. Q. Jia, M. O. Manasreh, K. R. Evans, and C. E. Stutz, Materials Science Forum 83-87, 1051-1055 (1992). http://dx.doi.org/10.1557/PROC-241-69
        166. "Local-mode Spectroscopy and Model Study for Assessing the Role of Light Defects in III-V Compound Semiconductors." D. N. Talwar, M. O. Manasreh, D. W. Fischer, S. J. Pearton, and G. Matous, Materials Science Forum 83-87, 533-538 (1992). http://dx.doi.org/10.4028/www.scientific.net/MSF.83-87.533
        167. "Origin of the Blue-Shift in the Intersubband Infrared Absorption in GaAs/Al0.3Ga0.7As Multiple Quantum Well." M. O. Manasreh, F. Szmulowicz, T. Vaughan, K. R. Evans, C. E. Stutz, and D.W. Fischer, Phys. Rev. B 43, 9996-9999 (1991). Rapid Communication. http://dx.doi.org/10.1103/PhysRevB.43.9996
        168. Response to: "Comment on 'The Effect of Charge State on the Local Vibrational Mode Absorption of the Carbon Acceptor in Semi-insulating GaAs' by W. J. Moore and B. V. Shanabrook." [J. Appl. Phys. 68, 1504 (1990)] D. W. Fischer and M. O. Manasreh, J. Appl. Phys. 69, 6733-6734 (1991).  http://dx.doi.org/10.1063/1.348898
        169. "Anomalous Behavior of Cyclotron Resonance in GaAs/Al0.28Ga0.72As High Electron Mobility Transistor Structures." M. O. Manasreh, D. W. Fischer, K. R. Evans, and C. E. Stutz, Phys. Rev. B 43, 9772-9776 (1991). http://dx.doi.org/10.1103/PhysRevB.43.9772
        170. "Temperature Dependence of the Linewidth and Peak Position of the Intersubband Infrared Absorption in GaAs/Al0.3Ga0.7As Quantum Wells." M. O. Manasreh, C. E. Stutz, K. R. Evans, F. Szmulowicz, and D. W. Fischer, Materials Research Society, vol. 216, 341-346 (1991). http://dx.doi.org/10.1557/PROC-216-341 
        171. "Observation of Deep Defects in As-Rich GaAs Grown by the Molecular-Beam Epitaxy Technique at 200 oC." M. O. Manasreh, D. C. Look, C. E. Stutz, and K. R. Evans, in Semi-insulating III-V Materials, Toronto 1990, edited by A. G. Milnes and C. J. Miner, (Adam Hilger, New York, 1990), PP. 105-110.
        172. "The Temperature Dependence of Intersubband Absorption in a GaAs/Al0.3Ga0.7As Quantum Well Structure" F. Szmulowicz, M. O. Manasreh, D. W. Fischer, F. Madarasz, K. R. Evans, E. Stutz, and T. Vaughan, Superlattices and Microstructures 8, 63-67 (1990). http://dx.doi.org/10.1016/0749-6036(90)90276-D
        173. "Intersubband Infrared Absorption in a GaAs/Al0.3Ga0.7As Quantum Well Structure." M. O. Manasreh, F. Szmulowicz, D. W. Fischer, K. R. Evans, and C. E. Stutz, Appl. Phys. Lett. 57, 1790-1792 (1990). http://dx.doi.org/10.1063/1.104023
        174. "Far-infrared Absorption from Shallow Acceptors and its Relationship to the Persistent Photocurrent in Semi-insulating GaAs." M. O. Manasreh, W. C. Mitchel, and D. W. Fischer, Semicond. Science and Technol. 5, 994-996 (1990). Letter to the Editor. http://dx.doi.org/10.1088/0268-1242/5/9/013
        175. "The Effect of Charge State on the Local Vibrational Mode Absorption of the Carbon Acceptor in Semi-insulating GaAs." D. W. Fischer and M. O. Manasreh, J. Appl. Phys. 68, 2504-2506 (1990). Rapid Communication. http://dx.doi.org/10.1063/1.346516 
        176. "Anomalous Hall-Effect Results in Low-Temperature Molecular-Beam Epitaxial GaAs: Hopping in a Dense EL2-Like Band." D. C. Look, D. C. Walters, M. O. Manasreh, J. R. Sizelove, C. E. Stutz, and K. R. Evans, Phys. Rev. B 42, 3578-3581 (1990). http://dx.doi.org/10.1103/PhysRevB.42.3578
        177. "The Double Donor Issue of the EL2 Defect in GaAs." M.O. Manasreh and G.J. Brown, in Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures, edited by J. Bernholc, E.E. Haller, and D.J. Wolford (Materials Research Society, Pittsburgh, 1990), Vol. 163, pp. 809-814. http://dx.doi.org/10.1557/PROC-163-809 
        178. "Optical Absorption of Deep Defects in Neutron Irradiated Semi-insulating GaAs." M.O. Manasreh and P.J. Pearah, in Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures, edited by J. Bernholc, E.E. Haller, and D.J. Wolford, (Materials Research Society, Pittsburgh, 90), vol.163, pp.175-178. http://dx.doi.org/10.1557/PROC-163-175
        179. "Optical Recovery from the Metastable EL2 Defect in GaAs Under Monochromatic Light Illumination." M.O. Manasreh and D.W. Fischer, in Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures, edited by J. Bernholc, E.E. Haller, and D.J. Wolford (Materials Research Society, Pittsburgh, 1990), vol.163, pp. 827-830. http://dx.doi.org/10.1557/PROC-163-827
        180. "Incorporation of Carbon in Heavily-Doped AlxGa1-xAs Grown by Metal Organic Molecular Beam Epitaxy." C. R. Abernathy, S. J. Pearton, M. O. Manasreh, D. W. Fischer, and D. N. Talwar, Appl. Phys. Lett. 57, 294-296 (1990). http://dx.doi.org/10.1063/1.103718
        181. "Infrared Absorption of Deep Defects in Molecular-Beam Epitaxial GaAs Layers Grown at 200 oC: Observation of an EL2-Like Defect." M. O. Manasreh, D. C. Look, K. R. Evans, and C. E. Stutz, Phys. Rev. B 41,10272-10275 (1990). Rapid Communication. http://dx.doi.org/10.1103/PhysRevB.41.10272
        182. "Photoreflectance and the Electric Fields in GaAs Depletion Region" M. Sydor, T. R. Engholm, M. O. Manasreh, C. E. Stutz, L. Liou, and K. R. Evans, Appl. Phys. Lett. 56, 1769-1771 (1990). http://dx.doi.org/10.1063/1.103094
        183. "Quenching and Recovery Characteristics of the EL2 Defect in GaAs Under Monochromatic Light Illumination." M. O. Manasreh and D. W. Fischer, Phys. Rev. B 40, 11756-11763 (1989). http://dx.doi.org/10.1103/PhysRevB.40.11756
        184. "Noncreation of the EL2 Defect in Neutron Irradiated GaAs." M. O. Manasreh and D. W. Fischer, Phys. Rev. B 40, 5814-5816 (1989). http://dx.doi.org/10.1103/PhysRevB.40.5814
        185. "Observation of the Second Energy Level of the EL2 Defect in GaAs by the Infrared Absorption Technique." M. O. Manasreh, B. C. Mitchel, and D. W. Fischer, Appl. Phys. Lett. 55, 864-866 (1989). http://dx.doi.org/10.1063/1.101623 
        186. "The EL2 Defect in GaAs: Some Recent Developments." M. O. Manasreh, D. W. Fischer, and W. C. Mitchel, Phys. Stat. Solidi (b), 154, 11-42 (1989). Invited review article. http://dx.doi.org/10.1002/pssb.2221540102
        187. "Optical Absorption of the Isolated AsGa Antisite and an EL2 - Like Defect in Neutron-transmutation Doped GaAs." M. O. Manasreh and D. W. Fischer, in Characterization of the Structure and Chemistry of Defects in Materials, edited by B. C. Larson, M. Ruhle, and D. N. Seidman, (Materials Research Society, Pittsburgh, 1989), vol.138, pp.273-278. http://dx.doi.org/10.1557/PROC-138-273
        188. "Ultrasonic Attenuation Peaks Near the Diffuse Transition Temperature in Solid Electrolytes with Fluorite Structure." M. O. Manasreh, D. O. Pederson, and T. S. Aurora, in Solid State Ionics, edited by G. Nazri, R. A. Huggins, and D. F. Shriver, (Materials Research Society, Pittsburgh, 1989), vol. 135, pp.309-316. ILLIAD Request http://dx.doi.org/10.1557/PROC-135-309
        189. "Persistent Photocurrent in Semi-insulating GaAs and Its Relationship to the Deep Donor EL2." W. C. Mitchel, D. W. Fischer, and M. O. Manasreh, Solid State Communications 71, 337-342 (1989). http://dx.doi.org/10.1016/0038-1098(89)90766-7
        190. "Photoquenching and Photoinduced Recovery Properties of the EL2 Defect in GaAs: Evidence Against The Identification of EL2 with the Isolated As Antisite Defect." M. O. Manasreh and D. W. Fischer, Phys. Rev. B 39, 13001-13004 (1989). Rapid Communication. http://dx.doi.org/10.1103/PhysRevB.39.13001
        191. "Photoluminescence Bands of Deep Centers in Neutron-Transmutation Doped GaAs." M. O. Manasreh and S. M. Mudare, Semicond. Sci. and Technol. 4, 435-438 (1989).
        192. "Temperature Dependence of the Photo-induced EL2* ® EL2o Recovery Process Observed in Infrared Absorption." D. W. Fischer and M. O. Manasreh, Appl. Phys. Lett. 54, 2018-2020 (1989). http://dx.doi.org/10.1063/1.101178
        193. "Infrared Absorption Properties of the EL2 and the Isolated AsGa Defects in Neutron-transmutation Doped GaAs: Generation of an EL2 - Like Defect." M. O. Manasreh and D. W. Fischer, Phys. Rev. B 39, 3239-3249 (1989). http://dx.doi.org/10.1103/PhysRevB.39.3239
        194. "Electron-Irradiation Effects on the Infrared Absorption Properties of the EL2 Defect in GaAs." M. O. Manasreh and D. W. Fischer, Phys. Rev. B 39, 3871-3874 (1989). http://dx.doi.org/10.1103/PhysRevB.39.3871
        195. "Infrared Absorption of Electron Irradiation-induced Deep Defects in Semi-insulating GaAs." M. O. Manasreh and D. W. Fischer, Appl. Phys. Lett. 53, 2429-2431 (1988). http://dx.doi.org/10.1063/1.100229 
        196. "Ultrasonic Attenuation Peaks Near the Diffuse Solid Electrolyte Transition Temperature in PbF2 and BaF2." M. O. Manasreh and D. O. Pederson, Phys. Rev. B 38, 6270-6273 (1988). http://dx.doi.org/10.1103/PhysRevB.38.6270
        197. "Neutron Irradiation Effect on the Infrared Absorption of the EL2 Defect in GaAs: New Interpretation for the Intracenter Transition." M. O. Manasreh, D. W. Fischer, and B. C. Covington, Phys. Rev. B 37, 6567-6570 (1988). Rapid communication. http://dx.doi.org/10.1103/PhysRevB.37.6567
        198. "Electron Paramagnetic Resonance of the Isolated AsAntisite Defect in Neutron-transmutation Doped Semi-insulating GaAs." M. O. Manasreh, P. F. McDonald, S. A. Kivlighn, J. T. Minton, and B. C. Covington, Solid State Communication 65, 1267-1269 (1988). http://dx.doi.org/10.1016/0038-1098(88)90073-7
        199. "Comment on 'Atomic Model for the EL2 Defect in GaAs.' by J. F. Wager and J. A. Van Vechten" M. O. Manasreh, Phys. Rev. B 37, 2722-2723 (1988). http://dx.doi.org/10.1103/PhysRevB.37.2722
        200. "New Evidence of Small Lattice Relaxation for the DX Center in AlxGa1-xAs:Si." D. N. Talwar, M. O. Manasreh, K. S. Suh, and B. C. Covington, Appl. Phys. Lett. 51, 1358-1360 (1987).  http://dx.doi.org/10.1063/1.98678 
        201. "Infrared-absorption Properties of EL2 in GaAs." M. O. Manasreh and B. C. Covington, Phys. Rev. B 36, 2730-2734 (1987). http://dx.doi.org/10.1103/PhysRevB.36.2730
        202. "Fourier-transform Infrared-absorption Studies of Intracenter Transition in EL2 Level in Semi-insulating Bulk GaAs Grown with the Liquid-encapsulated Czochralski Technique." M. O. Manasreh and B. C. Covington, Phys. Rev. B 35, 2524-2527 (1987). Rapid Communication. http://dx.doi.org/10.1103/PhysRevB.35.2524
        203. "Attenuation of Transverse Ultrasonic Waves Near the Diffuse Solid Electrolyte Transition in CdF2." M. O. Manasreh and D. O. Pederson, Phys. Rev. B 31, 8153-8156 (1985). http://dx.doi.org/10.1103/PhysRevB.31.8153
        204. "Elastic Constant of Barium Fluooride from 300K to 1250K." M. O. Manasreh and D. O. Pederson, Phys. Rev. B 31, 3960-3964 (1985). http://dx.doi.org/10.1103/PhysRevB.31.3960
        205. "Attenuation of Longitudinal Ultrasonic Wave Near the Diffuse Phase Transition in CdF2." M. O. Manasreh and D. O. Pederson, Solid State Ionic 15, 65-69 (1985). http://dx.doi.org/10.1016/0167-2738(85)90109-2
        206. "Elastic Constants of Cubic Lead Flride from 300K to 850K." M. O. Manasreh and D. O. Pederson, Phys. Rev. B 30, 3482-3485 (1984). http://dx.doi.org/10.1103/PhysRevB.30.3482
        207. "High Temperature Acoustic Bond Compatible with Fluoride Fluorite. II. Transverse Ultrasonic Measurements in BaF2." M. O. Manasreh and D. O. Pederson, J. Acoust. Soc. Am. 75, 1766-1769 (1984). http://dx.doi.org/10.1121/1.390976
        208. "Bromine Residue Compounds as Oxidation Catalyst for Graphitic Carbons." M. O. Manasrah and J. J. Santiago, Synthetic Metals 3, 43-52 (1981). http://dx.doi.org/10.1016/0379-6779(81)90041-2