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Publications

 

 

 

 

 

 

 

 

 

 

     

  1. “ Optical absorption of proton irradiated colloidal CdSe/ZnS core/shell nanocrystals ,” K. Y. Narsingi, M. O. Manasreh, and B. D. Weaver, J. Appl. Phys. (submitted).

  1. “ Photoluminescence properties of InAs/GaAs heterostructure with surface quantum dots sitting on multiple-layer buried quantum dots .” Baolai Liang, Zhiming Wang, Yuriy I. Mazur, Eric A DeCuir, Jr., Omar Manasreh, and Gregory J. Salamo , Materials Research Society, 2006 Fall Meeting. Paper # M15.5 (accepted).

  2. “ Optical properties of colloidal CdSe/ZnS core/shell nanocrystals embedded in a UV curable resin .” A. Joshi. E. A. Davis, K. Y. Narsingi, M. O. Manasreh, an W. D. Weaver. Materials Research Society, 2006 Fall Meeting. Paper # M6.4 (accepted)

  3. “ Multi-color long wavelength infrared detectors based on intersuband transitions in InGaAs and InAs quantum structures .” Brandon S. Passmore, M. O. Manasreh, Vasyl P. Kunets, Greg J. Salamo, Jinqiao Xie, Lin Zhou, and David J. Smith. Materials Research Society, 2006 Fall Meeting. Paper # M17.14 (accepted)

  4. “ 1.3 - 2.3 m m Intersubband transitions in GaN/AlN superlattices .” Eric A DeCuir, Jr., Jinqiao Xie, Emil Fred, Avinash Muddasani, Brandon S Passmore, Morgan E Ware, Omar Manasreh, Hadis Morkoc, and Greg Salamo. Materials Research Society, 2006 Fall Meeting. Paper # I13.1 (accepted)

  5. “ Temperature dependence of the band gap of colloidal CdSe/ZnS core/shell nanocrystals embedded into a UV curable resin, ” A. Joshi, K. Y. Narsingi, M. O. Manasreh, E. A. Davis, and B. D. Weaver, Appl. Phys. Lett. 89 , 131907(2006).

  6. “ Near-infrared wavelength intersubband transitions in GaN/AlN short period superlattices ,” E. A. DeCuir, Jr., Emil Fred, B. S. Passmore, A. Muddasani , M. O. Manasreh, Jinqiao Xie , Hadis Morkoç, M. E. Ware, and G. J. Salamo, Appl. Phys. Lett. 89 , (2006).

  7. “ Optical properties of colloidal InGaP/ZnS core/shell nanocrystals ,” A. Joshi, M. O. Manasreh, E. A. Davis, and B. D. Weaver, Appl. Phys. Lett. 89 , 111907 (2006).

  8. “ Correlation between surface and buried InAs quantum dots ,” B. L. Liang, Zh. M. Wang, Yu. I. Mazur, G. J. Salamo, E. A. Decuir, Jr., and M. O. Manasreh, Appl. Phys. Lett. 89 , 043125 (2006).

  9. “ Investigation of indium distribution in InGaAs/GaAs quantum dot stacks using high-resolution x-ray diffraction and Raman scattering ,” Yu. I. Mazur , Zh. M. Wang , G. J. Salamo , V. V. Strelchuk , V. P. Kladko , V. F. Machulin , M. Ya. Valakh , and M. O. Manasreh , J. Appl. Phys. 99 , 023517-1 (2006).

  10. “ Investigation of rapid thermal annealing on Cu(In,Ga)Se 2 films and solar cells ,” X. Wang, S. S. Li, K. W. Kim, S. Yoon , V. Cracium, J. M. Howard, M. O. Manasreh, O. D. Crisalle,, and T. J. Anderson, Journal of Solar Energy Materials and Solar cells 90 , 2855-2866 (2006).

  11. “ Broadband photoresponse from InAs quantum dots embedded in InGaAs graded well ,” J. Liang, M. O. Manasreh, E. Marega, Jr., and G. J. Salamo, IEEE Electron Device Letters Vol. 26, 631-633, (2005).

  12. “ Intersubband transitions in proton irradiated InGaAs/GaAs multiple quantum dots, ” Y. C. Chua, E. A. decuir, Jr., M. O. Manasreh, and B. D. Weaver, Appl. Phys. Lett. 87 , No. 9, 091905 (2005).

  13. “ Investigation of pulsed laser annealing (PLA) and rapid thermal annealing (RTA) of CIGS films and solar cells ,” Xuege Wang, Sheng. S. Li, V. Craciun, W. K. Kim, S. Yoon, J. M. Howard, M. O. Manasreh, J.Venturini, O. D. Crisalle, and T. J. Anderson. IEEE 31 st Photovoltaic Specialists Conference (PVSC), Orlando , Florida (January 2005).

  14. “ Proton irradiation effect on single-wall carbon nanotubes in a poly(3-octylthiophene) matrix ” P. P. Neupane and M. O. Manasreh, B. D. Weaver, R.P. Rafaelle, and B.J. Landi, Appl. Phys. Lett. 86 , 221908-22190 (2005).

  15.   “ Intersubband transition in GaN/AlGaN multi-quantum wells ,” E. A. Decuir, Y. C. Chua, B. S. Passmore, J. Liang, J. Xie, H. Morkoç, A. Payne, and I. T. Ferguson, Materials Research Society, Vol. 829 , 175-181 (2005).

  16. “ Spectroscopic analysis of external stresses in semiconductor quantum-well materials ,” Jens W. Tomm , Mark L. Biermann, B. S. Passmore, M. O. Manasreh, A. Gerhardt, and Tran Q. Tien, Materials Research Society, Vol. 829 , 233-242 (2005). Invited.

  17. “ Intersubband Transitions in In 0.3 Ga 0.7 As/GaAs Multiple Quantum of Varying Dot-Sizes ,” Y.C. Chua, Jie Liang, B.S. Passmore, E. A. Decuir, M.O. Manasreh, Zhiming Wang, and G.J. Salamo, Materials Research Society, Vol. 829 , 15-20 (2005).

  18.   “ Longitudinal Modes in InAlGaAs/GaAs High-Power Laser Diodes ,” B. S. Passmore, S. C. Chua, M. O. Manasreh, and J. W. Tomm, Materials Research Society, Vol. 829 , 87-92 (2005).

  19. “ Tuning In 0.3 Ga 0.7 As/GaAs multiple quantum dots for long wavelength infrared detectors ”,Ying Chao Chua, E. A. Decuir, Jr., B. S. Passmore, K. H. Sharif, and M. O. Manasreh, Z. M. Wang and G. J. Salamo, Appl. Phys. Lett. 85 , 1003-1005 (2004). Selected for Vi rt ual Journal of Nanoscale Science & Technology--August 16, Vol. 10, Issue 7 (2004) http://www.vjnano.org

  20. “ Determination of the carrier concentration in InGaAsN/GaAs single quantum wells using Raman scattering ,” Patrick. A. Grandt, Aureus E. Griffith, M. O. Manasreh, D. J. Friedman,S. Dogan, and D. Johnstone, Appl. Phys. Lett. 85 , 4905-4907 (2004).
     

  21.  "Spectroscopic analysis of external stresses in semiconductor quantum-well materials." Jens W. Tomm, Mark L. Biermann, M. O. Manasreh, A. Gerhardt, and Tran Q. Tien, MRS 2004 Fall Meeting.
     

  22. "Intersubband Transitions in In0.3Ga0.7As/GaAs Multiple Quantum of Varying Dot-Sizes." Y.C. Chua, Jie Liang, B.S. Passmore, E. A. Decuir, M.O. Manasreh, Zhiming Wang, and G.J. Salamo, MRS 2004 Fall Meeting.
     

  23. "Longitudinal Modes in InAlGaAs/GaAs High-Power Laser Diodes" B. S. Passmore, S. C. Chua, M. O. Manasreh, and J. W. Tomm, MRS 2004 Fall Meeting.
      

  24.  "Tuning  In0.3Ga0.7As/GaAs multiple quantum dots for long wavelength infrared detectors." Ying Chao Chua, E. A. Decuir, Jr.,  B. S. Passmore, K. H. Sharif, and M. O. Manasreh, Z. M.  Wang and G. J. Salamo, Appl. Phys. Lett. August 2nd issue (2004).
      

  25. "Infrared Optical Absorbance of Intersubband Transitions in GaN/AlGaN Multiple Quantum Well Structures." Qiaoying Zhou, B. Pattada, Jiayu Chen, M. O. Manasreh, Faxian Xiu, Steve Puntigan, L. He, K. S. Ramaiah, and Hadis Morkoç, J. Appl. Phys. 94, 10140-10142 (2003) Selected for Virtual Journal of Nanoscale Science & Technology--June 09, Volume 7, Issue 23 (2003) [http://www.vjnano.org]
     

  26.  "Optical Absorption of Intersubband Transitions in In0.3Ga0.7As/GaAs Multiple Quantum Dots."  B. Pattada, Jiayu Chen, Qiaoying Zhou, M. O. Manasreh, M. Hussien, W. Ma, and G. J. Salamo, Appl.  Phys. Lett. 82, 2509-2511 (2003). Selected for Virtual Journal of Nanoscale Science & Technology--April 21, Volume 7, Issue 16 (2003) [http://www.vjnano.org]
      

  27.  "Normal Incident Infrared Intersubband Transitions of InGaAs/GaAs quantum dots." Mohammad Hussein,Wenquan Ma, M. O. Manasreh, and G. J. Salamo, Material Research Society Spring Meeting 2003, Symposium Q (accepted).
      

  28.  "Intersubband transitions in Proton Irradiated InGaAs/InAlAs, Multiple Quantum Wells Grown in Lattice Matched InP Substrates." Qiaoying Zhou, M. O. Manasreh, B. D. Weaver, and M. Missous, Material Research Society, Symposium "M", Fall Meeting 2002, (accepted)
      

  29.  "Intersubband Transitions in InxGa1-xAs/AlGaAs Multiple Quantum Wells for Long Wavelength Infrared Detection." Clayton L. Workman, Zhiming Wang, Wenquan Ma, Christi E. George, R. Paneer Selvam, Gregory J. Salamo, Qiaoying Zhou, and M. O. Manasreh, Material Research Society, Symposium "M", Fall Meeting 2002.
      

  30. "Interband transitions in GaInNAs/GaAs Single Quantum Wells." M. O. Manasreh, D. J. Friedman, W. Q. Ma,  C. L. Workman, C. E. George,  and G. J. Salamo, Material Research Society, Symposium "M", Fall Meeting, 2002.
     

  31. "Phonon Modes of GaN/AlN Heterojunction Field Effect Transistor Structures Grown on Si(111) Substrates."  B. Pattada, Jiayu Chen, M. O. Manasreh, S. Guo, and B. Peres, J. Appl. Phys. 93, 5824-5826 (2003).  Rapid Communication.
     

  32. "Photoluminescence of Metalorganic Chemical Vapor Deposition Grown GaInNAs/GaAs Single Quantum Wells." M. O. Manasreh, D. J. Friedman, W. Q. Ma,  C. L. Workman, C. E. George,  and G. J. Salamo, Appl. Phys. Lett. 82, 514-516 (2003).
     

  33. "Intersubband Transitions in Proton Irradiates InGaAs/InAlAs Multiple Quantum Wells Grown on Semi-insulating InP Substrates."  Qiaoying Zhou, M. O. Manasreh, B. D. Weaver, and M. Missous, Appl. Phys. Lett. 81, 3374-3376 (2002).
      

  34. "Ion-Beam-Produced Damage and its Stability in AlN Films."  S. O. Kucheyev, J. S. Williams, J. Zhou, C. Jagadish, , M. Pophristics, S. Guo, I. T. Ferguson, and M. O. Manasreh,  J. Appl. Phys. 92, 3554 (2003).
     

  35. "Response to 'Comment on "Thermal Annealing Efect on the Intersublevel Transitions in InAs Quantum Dots [Appl. Phys. Lett. 78, 2196 (2001)]." Y. Berhane, M. O. Manasreh, H. Yang, and G. J. Salamo, Appl. Phys. Lett. 80, 4869-4870 (2002).
     

  36. "Intersubband Transitions in InGaAs/InAlAs Multiple Quantum Wells Grown on InP Substrate" Qiaoying Zhou, M. O. Mansreh, B. D. Weaver, and M. Missous, Materials Research Society, vol. 692, 253-258 (2002).
     

  37. "Local Vibrational Modes of Carbon-Hydrogen Complexes in Proton Irradiated AlGaN."  M. O. Manasreh and B. D. Weaver, Materials Research Society, vol. 692, 403- 409 (2002)
      

  38. "Thermal Annealing Effect on Carbon-Hydrogen complexes in AlGaN." M. O. Manasreh and D. W. Weaver, Materials Research Socity, vol. 692, 581-586 (2002).
     

  39. "Optical Absorption of Deep Defects in Proton Irradiated AlGaN thin films." Q. Zhou,  J. Chen, M. Pophristic, I. Ferguson, S. Kucheyev, C. Jagadish, and B. D. Weaver, Materials Research Society, vol. 693, 395-400 (2002).
     

  40. "Thermal Annealing Effect on Nitrogen Vacancy in Proton Irradiated AlGaN."  Qiaoying Zhou and M. O. Manasreh, Appl. Phys. Lett. 80, 2072-2074 (2002).
     

  41. "Structural Disorder in Ion-Implanted AlGaN." S. O. Keucheyev, S. J. Williams, J. Zou, G. Li, C. Jagadish, M. O. Manasreh, P. Pophristic, S. Guo, and I. T. Ferguson.  Appl. Phys. Lett. 80, 787-789 (2002).
     

  42. "Observation of Nitrogen Vacancy in AlxGa1-xN thin films." Q. Zhou, M. O. Manasreh, M. Pophristic, and I. Ferguson, Appl. Phys. Lett. 79, 2901-2903 (2001).
     

  43. "Thermal Annealing Effect on Intersublevel Transitions in InAs Quantum dots."  Y. Berhane, M. O. Manasreh, H. Yang, and G. J. Salamo, Appl. Phys. Lett. 78, 2196-2198 (2001).
     

  44. "Proton and He+-ion Radiation Effect on Intersubband transitions in GaAs/AlGaAs Multiple Quantum Wells."  Y. Berhane, M. O. Manasreh, B. D. Weaver, H. H. Tran, and C. Jagadish,  SPIE Proceedings, Vol 4454, p.85-93 (2001) (Invited). 
     

  45. "He+-Ion Irradiation Effect on Intersubband Transitions in GaAs/AlGaAs Multiple Quantum Wells."  Y. Berhane, M. O. Manasreh, and B. D. Weaver, J. Appl. Phys. 89, 3517-3519  (2001), Rapid Communication. 
     

  46.  "Disorder-Effects in Reduced Dimensional and Quanantum Electronics."  B. D. Weaver, R. Magno, E. M. Jackson, R. Wilkins, S. Shojah-Ardalan, A. C. Seabaugh, B. Brar, M. O. Manasreh, and Y. Berhane, AIP Conference Proceedings Vol. 552, 1210-1216 (2001) (Invited).
     

  47. "Optical Absorption Properties of Bulk SiC."  K. Miller, Hong-Xia Zhang, M. O. Manasreh, Z. C. Feng, and I. Ferguson, Materials Research Society, Vol. 640, page H5.23 (2001).
     

  48. "Carbon-Hydrogen Complexes in Metalorganic Chemical Vapor Deposition Grown GaN."  M. O. Manasreh, C. A. Tran, and I. Ferguson, Materials Research Society, Vol. 639 (2001)
     

  49. "Thermal Annealing Recovery of Intersubband Transitions in Proton Irradiated GaAs/AlGaAs Multiple Quantum Wells."  F. Hegeler, M. O. Manasreh, C. Morath, P. Ballet, H. Tang, G. J. Salamo, H. H. Tan, and C. Jagadish, Appl. Phys. Lett. 77, 2867-2869 (October 2000).
     

  50.  "Introduction to Defects and Structural Properties of III-Nitride Semiconductors." M. O. Manasreh in "III-Nitride Semiconductors: Defects and Structural Properties" (Elsevier, Amsterdam, The Netherlands, 2000), chapter 1, pp 1- 23.
     

  51. "Introduction to InP and related Compounds."  M. O. Manasreh, in "Optoelectronic Properties of Semiconductors and Superlattices", (Gordon & Breach, Newark, NJ, 2000), Vol. 9,  chapter one, pp.1-7.
     

  52. "Fast Neutron Irradiation Effects on the Interband Transitions in InGaAs/AlGaAs Multiple Quantum Wells." M. O. Manasreh and S. Subramanian, Materials Research Society, Vol. 607, 525 - 528 (2000).
     

  53. "Degradation of Intersubband Transitions in Electron Irradiated GaAs/AlGaAs Multiple Quantum Wells with Superlattice Barriers." C. Morath, M. O. Manasreh, H. S. Gingrich, H. J von Bardeleben, P. Ballet, J. B. Smathers,  and G. J. Salamo, Materials Research Society, Vol. 607, 503 - 508 (2000).
     

  54. "Thermal Annealing Recovery of Intersubband Transitions in Proton Irradiated GaAs/Al0.3Ga0.7As Multiple Quantum Wells." H. S. Gingrich, C. Morath, M. O. Manasreh, P. Ballet, J. B. Smathers, G. J. Salamo, and C. Jagadish, Materials Research Society, Vol. 607, 217-222 (2000).
     

  55. "Introduction."  M. O. Manasreh, in "Optoelectronic Properties of Semiconductors and Superlattices", (Gordon & Breach, Newark, NJ, 1997), Vol. 3,  chapter one, pp.1-5.
     

  56. "Intersubband Transitions in InGaAs/AlGaAs Multiple Quantum Wells and Their Behavior Under Proton and Electron Irradiation."  M. O. Manasreh, P. Ballet, J. B. Smathers, G. J. Salamo, C. Jagadish, and H. J. von Bardeleben, the 5th International Conference on Intersubband Transitions in Quantum Wells, Bad Ischl, Austria, September 7-11 (1999).
     

  57. "Localized Vibrational Modes of Carbon-Hydrogen Complexes in GaN." M. O. Manasreh, J. M. Baranowski, K. Pakula, H. X. Jiang and Jingyu Lin, Appl. Phys. Lett. 75, 659-661 (1999).
     

  58. "Proton Irradiation Effects on the Intersubband Transition in GaAs/AlGaAs Multiple Quantum Wells with Bulk or Superlattice barriers."  M. O. Manasreh, P. Ballet, J. B. Smathers, G. J. Salamo, and C. Jagadish, Appl. Phys. Lett. 75, 525-527 (1999).
     

  59. "Electron Irradiation Effects on the Intersubband Transitions in InGaAs/AlGaAs Multiple Quantum Wells."  M. O. Manasreh, H. J. von Bardeleben, A. M. Mousalitin, and D. R. Khokhlov, J. Appl. Phys. 85, 630-632 (1999). Rapid Communication.
     

  60. "Two and Three Color Infrared Detection with In GaAs/A1GaAs Double and Triple-Coupled Quantum Wells." A Stead, M Missous, M O Manasreh, Presented at SIOE '99 Conference on Semiconductor and Integrated Optoelectronics Conference, University of Wales, CARDIFF, Wales, 7-9 April 1999.
     

  61. "Structural and Optical Properties of Multiple Quantum well Compressively Strained In0.1Ga0.9As/Al0.33Ga0.67As Superlattices Grown by Molecular Beam Epitaxy for infrared detection in the 6-13 mm spectral range."  A. Stead, M. Missous, and M. O. Manasreh, Electron Devices for Microwave and Optoelectronic (EDMO) Workshop, UMIST, Manchester, UK, 23-24 Nov 1998.
     

  62. "Overview of Quantum Well Infrared Detectors."  M. O. Manasreh and M. Missous, Symposium K1: Light Emitting Devices for Optoelectronic Applications.  The 193rd Meeting of the Electrochemical Society, San Diego, CA, 3-8 May 1998.  Invited.
     

  63. "g-Ray Irradiation Effect on the Intersubband Transition in InGaAs/AlGaAs Multiple Quantum Wells."  M. O. Manasreh, J. R. Chavez, W. T. Kemp, K. Hoenshel, and M. Missous, Materials Research Society, Vol. 484, 637-641 (1998).
     

  64. "Quantum Well Infrared Photodetectors." M. O. Manasreh, M. Missous, A. Stead, C. Jelen, and M. Razeghi, The Fifth International Symposium On Long Wavelength Infrared Detectors and Arrays:  Physics and Applications V, The 192nd Meeting of the Electrochemical Society, Paris, France,1- 5 Sept. 1997.  Volume 97-33, pp. 69-80 (1997).  Invited.
     

  65. "Exchange Interaction Effect on the Dark Current in n-Type GaAs/AlGaAs Multiple Quantum Wells Infrared Detectors." D. H. Huang and M. O. Manasreh, J. Appl. Phys. 81, 1305-1310 (1997).
     

  66. "Theoretical Studies of Electronic Intersubband Transitions in Multiple Quantum Wells for Infrared Photodetector Applications."  D. Huang and M. O. Manasreh, Materials Research Society, Vol. 450, 173-187 (1997), (invited).
     

  67. "Intersubband Transitions in Triple-Coupled Quantum Wells for Three-Colors Infrared Detectors."  D. Huang and M. O. Manasreh, J. Appl. Phys. 80, 6045-6049 (1996).
     

  68. "Reply to 'Comment on "Many-body Analysis of the Effects of Electron Density and Temperature on the Intersubband Transition in AlxGa1-xAs/GaAs Multiple Quantum Wells." M. Zaluzny, Phys. Rev. B 54, 10978-10979, (1996)' ", D. Huang, M. O. Manasreh, and G. Gumbs, Phys. Rev. B 54, 10980-10981 (1996).
     

  69. "Recent Developments of Ultraviolet Materials Based on GaN and related materials for Remote Sensing."  M. O. Manasreh and D. H. Huang, SPIE Proceedings, Vol 2831, pp.  252 - 258 (1996).  (Invited).
     

  70. "Temperature Dependence of the Absorption Band Gap Edge of GaN."  M. O. Manasreh and A. K. Sharma, Materials Research Society, Vol. 395, 553-557 (1996).
     

  71. "Intersubband Transitions in Strained In0.07Ga0.93As/Al0.4Ga0.6As Multiple Quantum Wells and Their Application to Two-Colors Photodetectors."  D. H. Huang and M. O. Manasreh, Phys. Rev. B 54,  5620-5628 (1996).
     

  72. "The Effects of the Screened Exchange Interaction on the Tunneling and Landau Gaps in Double Quantum Wells."  D. Huang and M. O. Manasreh, Phys. Rev. B 54, 2044-2048 (1996).
     

  73. "Optical Absorption Near the Band Edge in GaN Grown by Metalorganic Chemical Vapor Deposition."  M. O. Manasreh, Phys. Rev. B 53, 16425-16428 (1996).
     

  74. "Many-body Analysis of the Effects of Electron Density and Temperature on the Intersubband Transition in AlxGa1-xAs/GaAs Multiple Quantum Wells."  D. Huang, G. Gumbs, and M. O. Manasreh,  Phys. Rev. B 52, 14126-14130 (1995).
     

  75. "Theoretical Modeling of the Intersubband Transitions in Al0.3Ga0.7As/GaAs Semiconductor Quantum Wells."  M. O. Manasreh, D. Huang, and G. Gumbs, presented and published in The Proceedings of the Third International Symposium On Long Wavelength Infrared Detectors and Arrays:  Physics and Applications III, The Electrochemical Society, Volume 95-28,  pp. 240-257 (1995). Invited.
     

  76. "Quantum Wells and Superlattices for Space-Based Long Wavelength Infrared Photodetectors." A. Singh and M. O. Manasreh, SPIE, vol. 2397, 193-209 (1995).  Invited.
     

  77. "Temperature Dependence of the Direct Energy Gap and Donor-Acceptor Transition Energies in Be-Doped GaAsSb Lattice Matched to InP."  K. G. Merkel, V. M. Bright, M. Marciniak, C. L. A. Cerny, and M. O. Manasreh, Appl. Phys. Lett. 65, 2442-2444 (1994).
     

  78. "Temperature and Many-Body Effects on the Intersubband Transition in a GaAs/ Al0.3Ga0.7As Multiple Quantum Wells."  F. Szmulowicz, M. O. Manasreh, C. E. Stutz, and T. Vaughan,  Phys. Rev. B 50, 11618 - 11623 (1994).
     

  79. "Moving Photoluminescence Bands in GaAsSb layers Grown by Molecular Beam Epitaxy on InP Substrates."  P. W. Yu, C. E. Stutz, M. O. Manasreh, R. Kaspi, and M. A. Capano, J. Appl. Phys. 76, 504-508 (1994).
     

  80. "Alloy Dependence of the Carrier Concentration and Negative Persistent Photoconductivity in Ga1-xAlxSb/InAs/Ga1-xAlxSb Single Quantum Wells."  H. J. von Bardeleben, M. O. Manasreh, and C. E. Stutz, Materials Science Forum, Vol. 143/147, 611 (1994).
     

  81. "Intersubband Transitions in In0.07Ga0.93As/Al0.4Ga0.6As Multiple Quantum Wells."  F. Szmulowicz, M. O. Manasreh, C. Kutsche, and C. E. Stutz, Materials Research Society, Vol. 299, 53-58 (1993).
     

  82. "Temperature and Polarization Dependence of the Optical Absorption in ZnGeP2 at 2 mm."  M. Shah, D. W. Fischer, M. C. Ohmer, M. O. Manasreh, and T. M. Pollack, Materials Research Society, Vol. 325, 463 - 468 (1994).
     

  83. "Band Edge Optical Absorption of Molecular Beam Epitaxial GaSb Grown on GaAs Substrate." M. Shah, M. O. Manasreh, R. Kaspi, M. Y. Yen, B. A. Philips, M. Skowronski, and J. Shinar, Materials Research Society, Vol. 325, 449 - 455 (1994).
     

  84. "Oxygen Doping of GaAs During OMVPE Controlled Introduction of Impurity Complexes."  Y. Park, M. Skowronski, T. S. Russell, and M. O. Manasreh, Materials Research Society, Vol. 325, 293 - 303 (1994). (Invited).
     

  85. "Calculation and Measurment of the Electron Density and Temperature Dependence of the Intersubband Absorption in n-type GaAs/Al0.3Ga0.7As Multiple Quantum Wells."  F. Szmulowicz, T. Vaughan, M. O. Manasreh, and C. E. Stutz, 21st International Conference on Physics of Semiconductors, edited by P. Jiang and H.-Z. Zheng, (World Scientific, 1993), vol. 1, pp. 733-736.
     

  86. "Additional H-Related Local Vibrational Modes in Proton-Implanted InP."  D. W. Fischer, M. O. Manasreh, and G. Matous, Semicond. Sci. and Technol. 9, 1-4 (1994).
     

  87. "Theory for the Oscillatory Cyclotron Resonance Effective Mass in a Heterostructure."  G. Gumbs, D. Huang, C. Zhang, and M. O. Manasreh, J. Appl. Phys.75, 902-907 (1994).
     

  88. "Infrared Studies of Be-Doped GaAs Grown by Molecular Beam Epitaxy at Low Temperatures."  D. N. Talwar, M. O. Manasreh, C. E. Stutz, R. Kaspi, and K. R. Evans,  J. Electronics Materials, Vol. 22, 1445-1448 (1993).
     

  89. "Hydrogen-Iron Interaction in Proton-Implanted InP:Fe."  D. W. Fischer, M. O. Manasreh, and G. Matous,  Appl. Phys. Lett. 63, 3038-3039 (1993).
     

  90. "Infrared Absorption of Localized Vibrational Modes of Silicon, Beryllium, and Aluminum in Low Temperature Molecular Beam Epitaxial GaAs."  M. O. Manasreh, C. E. Stutz, J. S. Solomon, M. B. Mier, R. Kaspi, and K. R. Evans, in "Semi-insulating III-V materials, Ixtapa, Mexico 1992", edited by C. J. Miner, W. Ford, and E. R. Weber, (Institute of Physics Publishing, Bristol and Philadelphia, 1993), pp. 147 - 151.
     

  91. "Infrared Absorption in Proton- and Deuteron-Implanted Semi-insulating InP:Fe."  D. W. Fisher, M. O. Manasreh, G. Matous, and S. J. Pearton, in "Semi-insulating III-V materials, Ixtapa, Mexico 1992", edited by C. J. Miner, W. Ford, and E. R. Weber, (Institute of Physics Publishing, Bristol , 1993), pp. 259 - 263.
     

  92. "A Normal Incidence Type II Quantum Well Infrared Photodetector Using an Indirect AlAs/Al0.5Ga0.5As System Grown on [110] GaAs for the Mid- and Long-Wavelength Multispectrum Detection."  Y. H. Wang, Sheng S. Li, P. Ho, and M. O. Manasreh, J. Appl. Phys.  74, 1382-1387 (1993).
     

  93. "Phonon Coupling Associated with Free to Bound and Bound to Bound Transitions in Molecular Beam Epitaxial GaAs."  D. C. Reynolds, D. N. Talwar, M. O. Manasreh, and C. E. Stutz, Phys. Rev. B 47, 13 304 - 13 308 (1993).
     

  94. "Hydrogen Complexes and their Vibrations in Proton- and Deuteron-Implanted InP: Theory and Experiment."  D. N. Talwar, D. W. Fischer, M. O. Manasreh, and G. Matous, Materials Research Society, Vol. 291, 561-566 (1993).
     

  95. "Optical Absorption of the Intersubband Transitions in GaAs/Al0.4Ga0.6As Multiple Quantum Wells with Superlattice Barriers."  M. O. Manasreh, B. Jogai, C. E. Stutz, and D. C. Reynolds, J. Appl. Phys. 73, 3105-3107 (1993).  Rapid Communication.
     

  96. "Far-infrared Cyclotron Resonance of 2-Dimensional Electron gas in III-V Semiconductors Heterostructures." M.O. Manasreh, in Semiconductor Interfaces, Microstructures and Devices: Properties and Applications, edited by Z. C. Feng (Institute of Physics publishing, Bristol, UK, 1993), chapter 7, pp. 163-178.
     

  97. "Electron Paramagnetic Resonance Study of the Two Dimensional Electron Gas in Ga1-xAlxSb/InAs Single Quantum Wells."  H. J. von Bardeleben, Y. Q. Jia, M. O. Manasreh, and C. E. Stutz, Appl. Phys. Lett. 62, 90 - 92 (1993).
     

  98. "Isochronal Annealing of Local Vibrational Modes in Proton- and Deuteron-Implanted InP."  D. W. Fischer, M. O. Manasreh, D. N. Talwar, and G. Matous, J. Appl. Phys.73, 78 - 83 (1993).
     

  99. "Theoretical Modeling of the Intersubband Transitions in III-V Semiconductor Multiple Quantum Wells."  J. P. Loehr and M. O. Manasreh, in "Semiconductor Quantum Wells and Superlattices for Long Wavelength Infrared Detectors", (Artech House, Boston, MA, 1993),  chapter two.  pp. 19 - 54.
     

  100. "Introduction to Long Wavelength Infrared Quantum Detectors."  M. O. Manasreh and G. J. Brown, in "Semiconductor Quantum Wells and Superlattices for Long Wavelength Infrared Detectors", (Artech House, Boston, MA, 1993),  chapter one.  pp. 1 - 17.
     

  101. "Intersubband Optical Absorption in Heavily-Doped n-type GaAs/Al0.3Ga0.7As Multiple Quantum Wells."  B. Jogai, M. O. Manasreh, C. E. Stutz, R. L. Whitney, and D. K. Kinell, Phys. Rev. B 46, 7208-7211 (1992).
     

  102. "Effect of Aluminum Composition on the Deep Level Donors of AlxGa1-xSb/InAs Single Quantum Wells."  I. Lo, W. C. Mitchel,  C. E. Stutz, and K. R. Evans and M. O. Manasreh, Materials Research Society, Vol. 262, 893-897 (1992).
     

  103. "Intersubband Infrared Absorption in a GaAs/Al0.3Ga0.7As Multiple Quantum Well."  M. O. Manasreh,  F. Szmulowicz, T. Vaughan, K. R. Evans, C. E. Stutz, and D. W. Fischer, in Intersubband Transitions in Quantum Wells , Edited by E. Rosencher, Børge Vinter, and B. Levine, NATO Series B: Physics Vol. 288 (Plenum Press, New York, 1992), pp.287 - 297.
     

  104. "Comment on 'Effect of Many-Body Corrections on Intersubband Transitions in GaAs/AlxGa1-xAs Multiple Quantum Wells' by B. Jogai, J. Vac. Sci. Technol. B9, 2473 (1991)."  F. Szmulowicz and M. O. Manasreh, J. Vac. Sci. Technol. B10, 1341-1342 (1992).
     

  105. "Incorporation of Silicon in Low Temperature Molecular Beam Epitaxial GaAs."  M. O. Manasreh, K. R. Evans, C. E. Stutz, D. C. Look, and J. Hemsky, Materials Research Society, Vol. 241, 27 - 31 (1992).
     

  106. "Electron Paramagnetic Resonance Study of Low Temperature Molecular Beam Epitaxy Grown GaAs and InP Layers."  H. J. von Bardeleben, Y. Q. Jia, J. F. Hirtz, J. C. Garcia, M. O. Manasreh, C. E. Stutz, and K. R. Evans, Materials Research Society, Vol. 241,  69 - 74 (1992).
     

  107. "Indirect Photoreflectance from High Electron Mobility Transistor Structures."  M. Sydor, J. R. Engholm, M. O. Manasreh,  K. R. Evans, C. E. Stutz, and W. C. Mitchel, Phys. Rev. B 45, 13796-13798 (1992).   Rapid Communication.
     

  108. "Local Mode Spectroscopy of Proton- and Deuteron-Implanted InP."  D. W. Fischer, M. O. Manasreh, and G. Matous, J. Appl. Phys. 71, 4805-4808 (1992).
     

  109. "Incorporation of Silicon and Aluminum in Low Temperature Molecular Beam Epitaxial GaAs."  M. O. Manasreh, K. R. Evens, C. E. Stutz, D. C. Look, and J. Hemsky, Appl. Phys. Lett. 60,  2377-2379 (1992).
     

  110. "A Shubnikov - de Haas Study in the Strained AlGaSb/InAs/AlGaSb Quantum Wells."   I. Lo, W. C. Mitchel, M. O. Manasreh, C. E. Stutz, and K. R. Evans,  Electrochemical Society Meeting, Proceeding Volume 92-19, 162-168 (1992).
     

  111. "Spin Splitting and Effective Mass in an Al0.6Ga0.4Sb/InAs Single Quantum Well."  M. O. Manasreh, G. Gumbs, C. Zhang, I. Lo, C. A. Bozada, R. W. Dettmer, C. E. Stutz, and K. R. Evans, and W. C. Mitchel, Materials Research Society, vol. 240, 765-769 (1991).
     

  112. "Shubnikov - de Haas Studies of Negative Persistent Photoconductivity in Al0.6Ga0.4Sb/ InAs/Al0.6Ga0.4Sb Quantum wells."  I. Lo, W. C. Mitchel, M. O. Manasreh, C. E. Stutz, and K. R. Evans, Materials Research Society, vol. 240, 759-764 (1991).
     

  113. "Effective Mass of the 2-Dimensional Electron gas in an Al0.6Ga0.4Sb/InAs Single Quantum Well."  M. O. Manasreh, G. Gumbs, C. Zhang, C. E. Stutz, K. R. Evans, C. A. Bozada, I. Lo, and W. C. Mitchel,  Superlattices and Microstructures 11, 423-427 (1992).
     

  114. "Electron Paramagnetic Resonance Study of GaAs grown by Low Temperature Molecular Beam Epitaxy." H. J. von Bardeleben, M. O. Manasreh, D. C. Look, K. R. Evans, and C. E. Stutz, Phys. Rev. B 45,  3372-3375 (1992).
     

  115. "Negative Persistent Photoconductivity in the Al0.6Ga0.4Sb/InAs Single Quantum Wells."  I. Lo, W.C. Mitchel, M.O. Manasreh, C.E. Stutz, and K.R. Evans, Appl. Phys. Lett. 60, 751-753 (1992).
     

  116. "Electron Paramagnetic Resonance Studies of Low Temperature Molecular Beam Epitaxial GaAs Layers."  H. J. von Bardeleben, Y. Q. Jia, M. O. Manasreh, K. R. Evans, and C. E. Stutz, Materials Science Forum 83-87, 1051-1055 (1992).
     

  117. "Local-mode Spectroscopy and Model Study for Assessing the Role of Light Defects in III-V Compound  Semiconductors."  D. N. Talwar, M. O. Manasreh, D. W. Fischer, S. J. Pearton, and G. Matous, Materials Science Forum 83-87, 533-538 (1992).
     

  118. "Origin of the Blue-Shift in the Intersubband Infrared Absorption in GaAs/Al0.3Ga0.7As Multiple Quantum Well."  M. O. Manasreh, F. Szmulowicz, T. Vaughan, K. R. Evans,  C. E. Stutz, and D.W. Fischer, Phys. Rev. B 43, 9996-9999 (1991). Rapid Communication.
     

  119. "Response to:  "Comment on 'The Effect of Charge State on the Local Vibrational Mode Absorption of the Carbon Acceptor in Semi-insulating GaAs" by W. J. Moore and B. V. Shanabrook." [J. Appl. Phys. 68, 1504 (1990)] D. W. Fischer and M. O. Manasreh, J. Appl. Phys. 69, 6733-6734 (1991).
     

  120. "Anomalous Behavior of Cyclotron Resonance in GaAs/Al0.28Ga0.72As High Electron Mobility Transistor Structures."   M. O. Manasreh, D. W. Fischer, K. R. Evans, and C. E. Stutz, Phys. Rev. B 43, 9772-9776  (1991).
     

  121. "Temperature Dependence of the Linewidth and Peak Position of the Intersubband Infrared Absorption in  GaAs/Al0.3Ga0.7As Quantum Wells."  M. O. Manasreh, C. E. Stutz, K. R. Evans, F. Szmulowicz, and D. W.  Fischer, Materials Research Society, vol. 216, 341-346 (1991).
     

  122. "Observation of Deep Defects in As-Rich GaAs Grown by the Molecular-Beam Epitaxy Technique at 200 oC."  M. O. Manasreh, D. C. Look, C. E. Stutz, and K. R. Evans, in Semi-insulating III-V Materials, Toronto 1990, edited by A. G. Milnes and C. J. Miner, (Adam Hilger, New York, 1990), PP. 105-110.
     

  123. "The Temperature Dependence of Intersubband Absorption in a GaAs/Al0.3Ga0.7As Quantum Well Structure."  F. Szmulowicz, M. O. Manasreh, D. W. Fischer, F. Madarasz, K. R. Evans, E. Stutz, and T. Vaughan, Superlattices and Microstructures 8, 63-67 (1990).
     

  124. "Intersubband Infrared Absorption in a GaAs/Al0.3Ga0.7As Quantum Well Structure." M. O. Manasreh, F. Szmulowicz, D. W. Fischer, K. R. Evans, and C. E. Stutz, Appl. Phys. Lett. 57, 1790-1792 (1990).
     

  125. "Far-infrared Absorption from Shallow Acceptors and its Relationship to the Persistent Photocurrent in Semi-insulating GaAs."  M. O. Manasreh, W. C. Mitchel, and D. W. Fischer,  Semicond. Science and Technol. 5, 994-996 (1990).  Letter to the Editor.
     

  126. "The Effect of Charge State on the Local Vibrational Mode Absorption of the Carbon Acceptor in Semi-insulating GaAs."  D. W. Fischer and M. O. Manasreh, J. Appl. Phys.  68, 2504-2506 (1990).   Rapid Communication.
     

  127. "Anomalous Hall-Effect Results in Low-Temperature Molecular-Beam Epitaxial GaAs:  Hopping in a Dense EL2-Like Band."  D. C. Look, D. C. Walters, M. O. Manasreh, J. R. Sizelove, C. E. Stutz, and K. R. Evans,  Phys. Rev. B 42,  3578-3581 (1990).
     

  128. "The Double Donor Issue of the EL2 Defect in GaAs."  M. O. Manasreh and G. J. Brown, in Impurities, Defects and Diffusion in Semiconductors:  Bulk and Layered Structures, edited by J. Bernholc, E. E. Haller, and D. J. Wolford (Materials Research Society,  Pittsburgh, 1990), vol.163,pp. 809-814.
     

  129. "Optical Absorption of Deep Defects in Neutron Irradiated Semi-insulating GaAs."  M. O. Manasreh and P. J. Pearah, in Impurities, Defects and Diffusion in Semiconductors:  Bulk and Layered Structures, edited by J. Bernholc, E. E. Haller, and D.J.Wolford, (Materials Research Society, Pittsburgh, 90), vol.163, pp.175-178.
     

  130. "Optical Recovery from the Metastable EL2 Defect in GaAs."  M. O. Manasreh and D. W. Fischer, in Impurities, Defects and Diffusion in Semiconductors:  Bulk and Layered Structures, edited by J. Bernholc, E. E. Haller, and D. J. Wolford (Materials Research Society,  Pittsburgh, 1990), vol.163, pp. 827-830.
     

  131. "Incorporation of Carbon in Heavily-Doped AlxGa1-xAs Grown by Metal Organic Molecular Beam Epitaxy."  C. R. Abernathy, S. J. Pearton, M. O. Manasreh, D. W. Fischer, and D. N. Talwar, Appl. Phys. Lett. 57, 294-296 (1990).
     

  132. "Infrared Absorption of Deep Defects in Molecular-Beam Epitaxial GaAs Layers Grown  at 200 oC:  Observation of an EL2-Like Defect."  M. O. Manasreh, D. C. Look, K. R. Evans, and C. E. Stutz, Phys. Rev. B 41,10272-10275 (1990).  Rapid Communication.
     

  133. "Photoreflectance and the Electric Fields in GaAs Depletion Region"  M. Sydor, T. R. Engholm, M. O. Manasreh, C. E. Stutz, L. Liou, and K. R. Evans, Appl. Phys. Lett. 56, 1769-1771 (1990).
     

  134. "Quenching and Recovery Characteristics of the EL2 Defect in GaAs Under Monochromatic Light Illumination."  M. O. Manasreh and D. W. Fischer, Phys. Rev. B 40, 11756-11763 (1989).
     

  135. "Noncreation of the EL2 Defect in Neutron Irradiated GaAs."  M. O. Manasreh and D. W. Fischer, Phys. Rev. B 40, 5814-5816 (1989).
     

  136. "Observation of the Second Energy Level of the EL2 Defect in GaAs by the Infrared Absorption Technique."   M. O. Manasreh, B. C. Mitchel, and D. W. Fischer, Appl. Phys. Lett. 55, 864-866 (1989).
     

  137. "The EL2 Defect in GaAs: Some Recent Developments."  M. O. Manasreh, D. W. Fischer, and W. C. Mitchel, Phys. Stat. Solidi (b),  154, 11-42 (1989).  Invited review article.

  138. "Optical Absorption of the Isolated AsGa Antisite and an EL2 - Like  Defect in Neutron-transmutation Doped GaAs."  M. O. Manasreh and D. W. Fischer, in Characterization  of the Structure and Chemistry of Defects in Materials, edited by B. C. Larson, M. Ruhle,  and D. N. Seidman, (Materials Research Society, Pittsburgh, 1989), vol.138, pp.273-278.
     

  139. "Ultrasonic Attenuation Peaks Near the Diffuse Transition Temperature in Solid Electrolytes with Fluorite Structure."  M. O. Manasreh,  D. O. Pederson, and T. S. Aurora,  in Solid State Ionics,  edited by G. Nazri, R. A. Huggins, and D. F. Shriver,  (Materials Research Society, Pittsburgh, 1989), vol. 135, pp.309-316.
     

  140. "Persistent Photocurrent in Semi-insulating GaAs and Its Relationship to the Deep Donor EL2."  W. C. Mitchel, D. W. Fischer, and M. O. Manasreh, Solid State Communications 71, 337-342 (1989).
     

  141. "Photoquenching and Photoinduced Recovery Properties of the EL2 Defect in GaAs:  Evidence Against The Identification of EL2 with the Isolated As Antisite Defect."   M. O. Manasreh and D. W. Fischer, Phys. Rev. B 39, 13001-13004 (1989). Rapid Communication.

  142. "Photoluminescence Bands of Deep Centers in Neutron-Transmutation Doped GaAs."    M. O. Manasreh and S. M. Mudare, Semicond. Sci. and Technol. 4, 435-438 (1989).
     

  143. "Temperature Dependence of the Photo-induced EL2* ® EL2o Recovery Process Observed in  Infrared Absorption."  D. W. Fischer and M. O. Manasreh, Appl. Phys. Lett.  54, 2018-2020 (1989).
     

  144. "Infrared Absorption Properties of the EL2 and the Isolated AsGa Defects in Neutron-transmutation Doped GaAs:  Generation of an EL2 - Like Defect."  M. O. Manasreh and D. W. Fischer, Phys. Rev. B 39, 3239-3249 (1989).
     

  145. "Electron-Irradiation Effects on the Infrared Absorption Properties of the EL2 Defect in GaAs."  M. O. Manasreh and D. W. Fischer,  Phys. Rev. B 39, 3871-3874 (1989).
     

  146. "Infrared Absorption of Electron Irradiation-induced Deep Defects in Semi-insulating GaAs."  M. O. Manasreh and D. W. Fischer, Appl. Phys. Lett. 53,  2429-2431 (1988).
     

  147. "Ultrasonic Attenuation Peaks Near the Diffuse Solid Electrolyte Transition Temperature in PbF2 and BaF2."  M. O. Manasreh and D. O. Pederson, Phys. Rev. B 38, 6270-6273 (1988).
     

  148. "Neutron Irradiation Effect on the Infrared Absorption of the EL2 Defect in GaAs:  New Interpretation for the Intracenter Transition."  M. O. Manasreh, D. W. Fischer, and B. C. Covington, Phys. Rev. B 37, 6567-6570 (1988).  Rapid communication.
     

  149. "Electron Paramagnetic Resonance of the Isolated As Antisite Defect in Neutron-transmutation Doped Semi-insulating GaAs."  M. O. Manasreh, P. F. McDonald, S. A. Kivlighn, J. T. Minton, and B. C. Covington, Solid State Communication 65, 1267-1269 (1988).

  150. "Comment on 'Atomic Model for the EL2 Defect in GaAs.'  by J. F. Wager and J. A. Van Vechten"  M. O. Manasreh, Phys. Rev. B 37, 2722-2723 (1988).

  151. "New Evidence of Small Lattice Relaxation for the DX Center in AlxGa1-xAs:Si."  D. N. Talwar, M. O. Manasreh, K. S. Suh, and B. C. Covington, Appl. Phys. Lett. 51, 1358-1360 (1987).

  152. "Infrared-absorption Properties of EL2 in GaAs."  M. O. Manasreh and B. C. Covington, Phys. Rev. B 36, 2730-2734 (1987).

  153. "Fourier-transform Infrared-absorption Studies of Intracenter Transition in EL2 Level in Semi-insulating Bulk GaAs Grown with the Liquid-encapsulated Czochralski Technique."  M. O. Manasreh and B. C. Covington, Phys. Rev. B 35, 2524-2527 (1987).  Rapid Communication.  

  154. "Attenuation of Transverse Ultrasonic Waves Near the Diffuse Solid Electrolyte Transition in CdF2."  M. O. Manasreh and D. O. Pederson, Phys. Rev. B 31, 8153-8156 (1985).
     

  155. "Elastic Constant of BaF2 from 300K to 1250K."  M. O. Manasreh and D. O. Pederson, Phys. Rev. B 31, 3960-3964 (1985).  

  156. "Attenuation of Longitudinal Ultrasonic Wave Near the Diffuse Phase Transition in CdF2."  M. O. Manasreh and D. O. Pederson, Solid State Ionic 15, 65-69 (1985).  

  157. "Elastic Constants of Cubic PbF2 from 300K to 850K."  M. O. Manasreh and D. O. Pederson, Phys. Rev. B 30, 3482-3485 (1984).  

  158. "High Temperature Acoustic Bond Compatible with Fluoride Fluorite.  II.  Transverse Ultrasonic Measurements in BaF2."  M. O. Manasreh and D. O. Pederson, J. Acoust. Soc. Am. 75, 1766-1769 (1984).

  159. "Bromine Residue Compounds as Oxidation Catalyst for Graphitic Carbons."  M. O. Manasreh and J. J. Santiago, Synthetic Metals  3, 43-52 (1981).