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    For a complete list of publications visit this page.

  1. Membrane amplitude and triaxial stress in twisted bilayer graphene deciphered using first-principles directed elasticity theory and scanning tunneling microscopy
    M. Neek Amal, P. Xu, D. Qi, P.M. Thibado, L.O. Nyakiti, V.D. Wheeler, R.L. Myers-Ward, C.R. Eddy, Jr., D.K. Gaskill, and F.M. Peeters
    Physical Review B 90, 064101 (2014).
  2. Unusual ultralow frequency fluctuations in freestanding graphene
    P. Xu, M. Neek-Amal, S. D. Barber, J. K. Schoelz, M.L. Ackerman, P. M. Thibado, A. Sadeghi, and F.M. Peeters
    Nature Communications 5, 3720 (2014). Click here for more information about this study.

  3. Self-organized platinum nanoparticles on freestanding graphene
    P. Xu, L. Dong, M. Neek-Amal, M. L. Ackerman, J. Yu, S. D. Barber, J. K. Schoelz, D. Qi, F. Xu, P. M. Thibado, and F.M. Peeters
    ACS Nano 8, 2697-2703 (2014). Click here for more information about this study.

  4. Competing scanning tunneling microscope tip-interlayer interactions for twisted multilayer graphene on the a-plane SiC surface
    P. Xu, M. L. Ackerman, S. D. Barber, J. K. Schoelz, P. M. Thibado, V. D. Wheeler, L. O. Nyakiti, R. L. Myers-Ward, C. R. Eddy, Jr., and D. K. Gaskill
    Surface Science 617, 113-117 (2013).

  5. Etch-stop method for reliably fabricating sharp yet mechanically stable scanning tunneling microscope tips
    G. Basnet, J. K. Schoelz, P. Xu, S. D. Barber, M. L. Ackerman, and P. M. Thibado
    Journal of Vacuum Science and Technology B 31, 043201 (2013).

  6. Role of bias voltage and tunneling current in the perpendicular displacements of freestanding graphene via scanning tunneling microscopy
    P. Xu, S. D. Barber, M. L. Ackerman, J. K. Schoelz, and P. M. Thibado
    Journal of Vacuum Science and Technology B 31, 04D103 (2013).

  7. Atomic-scale movement induced in nanoridges by scanning tunneling microscopy on epitaxial graphene grown on 4H-SiC(0001)
    P. Xu, S. D. Barber, J. K. Schoelz, M. L. Ackerman, D. Qi, P. M. Thibado, V. D. Wheeler, L. O. Nyakiti, R. L. Myers-Ward, C. R. Eddy, Jr., and D. K. Gaskill
    Journal of Vacuum Science and Technology B 31, 04D101 (2013).

  8. Graphene manipulation on 4H-SiC(0001) using scanning tunneling microscopy
    P. Xu, M. L. Ackerman, S. D. Barber, J. K. Schoelz, D. Qi, P. M. Thibado, V. D. Wheeler, L. O. Nyakiti, R. L. Myers-Ward, C. R. Eddy, Jr., and D. K. Gaskill
    Japanese Journal of Applied Physics 52, 035104 (2013).

  9. Broad frequency and amplitude control of vibration in freestanding graphene via scanning tunneling microscopy with calculated dynamic pseudo-magnetic fields
    P. Xu, J. K. Schoelz, S. D. Barber, M. L. Ackerman, and P. M. Thibado
    Journal of Applied Physics 112, 124317 (2012).

  10. Electronic transition from graphite to graphene via controlled movement of the top layer with scanning tunneling microscopy
    P. Xu, Y. Yang, D. Qi, S. D. Barber, J. K. Schoelz, M. L. Ackerman, L. Bellaiche, and P. M. Thibado
    Physical Review B 86, 085428 (2012).
    [Selected by the editors of PRB to be an Editors' Suggestion.]

  11. Electromechanical properties of freestanding graphene functionalized with tin oxide (SnO2) nanoparticles
    L. Dong, J. Hansen, P. Xu, M. L. Ackerman, S. D. Barber, J. K. Schoelz, D. Qi, and P. M. Thibado
    Applied Physics Letters 101, 061601 (2012).

  12. Schottky barrier and attenuation length for hot hole injection in nonepitaxial Au on p-type GaAs
    I. Sitnitsky, J. J. Garramone, J. Abel, P. Xu, S. D. Barber, M. L. Ackerman, J. K. Schoelz, P. M. Thibado, and V. P. LaBella
    Journal of Vacuum Science and Technology B 30, 04E110 (2012).

  13. New scanning tunneling microscopy technique enables systematic study of the unique electronic transition from graphite to graphene
    P. Xu, Y. Yang, S. D. Barber, J. K. Schoelz, D. Qi, M. L. Ackerman, L. Bellaiche, and P. M. Thibado
    Carbon 50, 4633-4639 (2012).

  14. A pathway between Bernal and rhombohedral stacked graphene layers with scanning tunneling microscopy
    P. Xu, Y. Yang, D. Qi, S. D. Barber, M. L. Ackerman, J. K. Schoelz, T. B. Bothwell, S. Barraza-Lopez, L. Bellaiche, and P. M. Thibado
    Applied Physics Letters 100, 201601 (2012).

  15. High-percentage success method for preparing and pre-evaluating tungsten tips for atomic-resolution scanning tunneling microscopy
    J. K. Schoelz, P. Xu, S. D. Barber, D. Qi, M. L. Ackerman, G. Basnet, C. T. Cook, and P. M. Thibado
    Journal of Vacuum Science and Technology B 30, 033201 (2012).
    [Winner of the 2012 AVS Vacuum Technology Division's Shop Note Award.]

  16. Atomic control of strain in freestanding graphene
    P. Xu, Y. Yang, S. D. Barber, M. L. Ackerman, J. K. Schoelz, D. Qi, I. A. Kornev, L. Dong, L. Bellaiche, S. Barraza-Lopez, and P. M. Thibado
    Physical Review B 85, 121406(R) (2012).

  17. Giant surface charge density of graphene resolved from scanning tunneling microscopy and first-principles theory
    P. Xu, Y. Yang, S. D. Barber, M. L. Ackerman, J. K. Schoelz, I. A. Kornev, S. Barraza-Lopez, L. Bellaiche, and P. M. Thibado
    Physical Review B 84, 161409(R) (2011).

  18. Streamlined inexpensive integration of a growth facility and scanning tunneling microscope for in-situ characterization
    P. Xu, D. Qi, S. D. Barber, C. T. Cook, M. L. Ackerman, and P. M. Thibado
    Journal of Vacuum Science and Technology B 29, 041804 (2011).

  19. Controlling Mn depth profiles in GaMnAs during high-temperature molecular beam epitaxial growth
    P. Xu, D. Qi, M. L. Ackerman, S. D. Barber, and P. M. Thibado
    Journal of Crystal Growth 327, 42-45 (2011).

  20. Anomalous Mn depth profiles for GaMnAs/GaAs(001) thin films grown by molecular beam epitaxy
    J. F. Xu, P. M. Thibado, C. Awo-Affouda, F. Ramos, and V. P. LaBella
    Journal of Vacuum Science and Technology B 25(4), 1476-1480 (2007).

  21. Growth of and optical emission from GaMnAs thin films grown by molecular beam epitaxy
    J. F. Xu, S. W. Liu, M. Xiao, and P. M. Thibado
    Journal of Vacuum Science and Technology B 25(4), 1467-1469 (2007).

  22. Electrical and optical studies of GaMnAs/GaAs(001) thin films grown by molecular beam epitaxy
    J. F. Xu, S. W. Liu, M. Xiao, and P. M. Thibado
    Journal of Crystal Growth 301-302, 101-104 (2007).

  23. Atmospheric oxygen in Mn doped GaAs/GaAs(001) thin films grown by molecular beam epitaxy
    J. F. Xu, P. M. Thibado, C. Awo-Affouda, R. Moore, and V. P. LaBella
    Journal of Crystal Growth 301-302, 54-57 (2007).

  24. 4 K, ultrahigh vacuum scanning tunneling microscope having two orthogonal tips with tunnel junctions as close as a few nanometers
    J. F. Xu, P. M. Thibado, and Z.Ding
    Review of Scientific Instruments 77, 093703 (2006).

  25. Arsenic-rich GaAs(001) surface structure
    V. P. LaBella, M. R. Krause, Z. Ding, and P. M. Thibado
    Surface Science Reports 60, 1-53 (2005).

  26. Electron-beam evaporated cobalt films on molecular beam epitaxy prepared GaAs(001)
    Z. Ding, P. M. Thibado, C. Awo-Affouda, and V. P. LaBella
    Journal of Vacuum Science and Technology B 22(4), 2068-2072 (2004).

  27. Origins of GaN(0001) surface reconstructions
    S. Vézian, F. Semond, J. Massies, D. W. Bullock, Z. Ding, and P. M. Thibado
    Surface Science 541, 242-251 (2003).

  28. Time-evolution of the GaAs(001) pre-roughening process
    Z. Ding, D. W. Bullock, P. M. Thibado, V. P. LaBella, and K. Mullen
    Surface Science 540, 491-496 (2003).

  29. Atomic-scale observation of temperature and pressure driven preroughening and roughening
    Z. Ding, D. W. Bullock, P. M. Thibado, V. P. LaBella, and K. Mullen
    Physical Review Letters 90, 216109 (2003).

  30. Role of aperiodic surface defects on the intensity of electron diffraction spots
    D. W. Bullock, Z. Ding, P. M. Thibado, and V. P. LaBella
    Applied Physics Letters 82(16), 2586-2588 (2003).

  31. Dynamics of spontaneous roughening on the GaAs (001)-(2×4) surface
    Z. Ding, D. W. Bullock, W. F. Oliver, and P. M. Thibado
    Journal of Crystal Growth 251, 35-39 (2003).

  32. Simultaneous surface topography and spin-injection probability
    D. W. Bullock, V. P. LaBella, Z. Ding, and P. M. Thibado
    Journal of Vacuum Science and Technology B 21(1), 67-70 (2003).

  33. Mapping the spin-injection probability on the atomic scale
    D. W. Bullock, V. P. LaBella, Z. Ding, and P. M. Thibado
    Journal of Superconductivity: Incorporating Novel Magnetism 15(1), 37-42 (2002).

  34. Enhancing the student-instructor interaction frequency
    D. W. Bullock, V. P. Labella, T. Clingan, Z. Ding, G. Stewart, and P. M. Thibado
    The Physics Teacher 40, 535-541 (2002).

  35. Enabling electron diffraction as a tool for determining substrate temperature and surface morphology
    V. P. LaBella, D. W. Bullock, Z. Ding, C. Emery, and P. M. Thibado
    Applied Physics Letters 79(19), 3065-3067 (2001)

  36. Spatially-resolved spin-injection probability for gallium arsenide
    V. P. LaBella, D. W. Bullock, Z. Ding, C. Emery, A. Venkatesan, M. Mortazavi, W. F. Oliver, G. J. Salamo, and P. M. Thibado
    Science 292, 1518-1521 (2001). Click here for more information about this study.

  37. Invited: A union of the real-space and reciprocal-space view of the GaAs(001) surface
    V. P. LaBella, Z. Ding, D. W. Bullock, C. Emery, and P. M. Thibado
    International Journal of Modern Physics B 15(17), 2301-2333 (2001).

  38. Microscopic structure of spontaneously formed islands on the GaAs(001)-(2×4) reconstructed surface
    V. P. LaBella, Z. Ding, D. W. Bullock, C. Emery, and P. M. Thibado
    Journal of Vacuum Science and Technology B 19(4), 1640-1643 (2001).

  39. A novel imaging mechanism to determine the atomic structure of the GaAs(001)-(2×4) surface
    V. P. LaBella, D. W. Bullock, P. M. Thibado, P. Kratzer, and M. Scheffler
    Omicron Newsletter 4(2), 4-5 (2000).

  40. Reflection high-energy electron diffraction and scanning tunneling microscopy study of InP(001) surface reconstructions
    V. P. LaBella, Z. Ding, D. W. Bullock, C. Emery, and P. M. Thibado
    Journal of Vacuum Science and Technology A 18(4), 1492-1496 (2000).

  41. Monte Carlo derived diffusion parameters for Ga on the GaAs(001)-(2×4) surface: a molecular beam epitaxy-scanning tunneling microscopy study
    V. P. LaBella, D. W. Bullock, Z. Ding, C. Emery, W. G. Harter, and P. M. Thibado
    Journal of Vacuum Science and Technology A 18(4), 1526-1531 (2000).

  42. Microscopic view of a two-dimensional lattice-gas Ising system within the grand canonical ensemble
    V. P. LaBella, D. W. Bullock, M. Anser, Z. Ding, C. Emery, L. Bellaiche, and P. M. Thibado
    Physical Review Letters 84(18), 4152-4155 (2000). Click here for more information about this study.

  43. Atomic structure of the GaAs(001)-(2×4) surface resolved using scanning tunneling microscopy and first-principles theory
    V. P. LaBella, H. Yang, D. W. Bullock, P. M. Thibado, P. Kratzer, and M. Scheffler
    Physical Review Letters 83(15), 2989-2992 (1999). Click here for more information about this study.

  44. Role of As4 in Ga diffusion on the GaAs(001)-(2×4) surface: a molecular beam epitaxy-scanning tunneling microscopy study
    H. Yang, V. P. LaBella, D. W. Bullock, and P. M. Thibado
    Journal of Vacuum Science and Technology B 17(4), 1778-1780 (1999).

  45. Activation energy for Ga diffusion on the GaAs(001)-(2×4) surface: an MBE-STM study
    H. Yang, V. P. LaBella, D. W. Bullock, Z. Ding, J. B. Smathers, and P. M. Thibado
    Journal of Crystal Growth 201-202, 88-92 (1999).

  46. Robust optical delivery system for measuring substrate temperature during molecular beam epitaxy
    P. M. Thibado, G. J. Salamo, and Y. Baharav
    Journal of Vacuum Science and Technology B 17(1), 253-256 (1999).

  47. Enabling in situ atomic-scale characterization of epitaxial surfaces and interfaces
    J. B. Smathers, D. W. Bullock, Z. Ding, G. J. Salamo, P. M. Thibado, B. Gerace, and W. Wirth
    Journal of Vacuum Science and Technology B 16(6), 3112-3114 (1998).