- Anomalous Mn depth profiles for GaMnAs/GaAs(001) thin films grown by molecular beam epitaxy
J. F. Xu and P. M. Thibado; C. Awo-Affouda, F. Ramos and V. P. LaBella
Journal of Vacuum Science and Technology B 25(4), 1476 (2007).
- Growth of and optical emission from GaMnAs thin films grown by molecular beam epitaxy
J. F. Xu, S. W. Liu, M. Xiao, and P. M. Thibado
Journal of Vacuum Science and Technology B 25(4), 1467 (2007).
- Electrical and Optical Studies of GaMnAs/GaAs(001) Thin Films Grown by Molecular Beam Epitaxy
J. F. Xu, S. W. Liu, M. Xiao, and P. M. Thibado
J. Crystal Growth 301-302, 101 (2007).
- Atmospheric Oxygen in Mn Doped GaAs/GaAs(001) Thin Films Grown by Molecular Beam Epitaxy
J. F. Xu and P. M. Thibado; C. Awo-Affouda, R. Moore and V. P. LaBella
J. Crystal Growth 301-302, 54 (2007).
- 4 K, ultrahigh vacuum scanning tunneling microscope having two
orthogonal tips with tunnel junctions as close as a few nanometers
J. F. Xu, P. M. Thibado and Z.Ding
Review of Scientific Instruments 70, 1 (2006).
- Arsenic-Rich GaAs(001) Surface Structure
V. P. LaBella, M. R. Krause, Z. Ding, and P. M. Thibado
Surface Science Reports 60, 1 (2005).
- Electron-beam evaporated cobalt films on molecular beam epitaxy prepared GaAs(001)
Z. Ding, P. M. Thibado, C. Awo-Affouda, and V. P. LaBella
Journal of Vacuum Science and Technology B 22(4), 2068 (2004).
- Origin of the GaN(0001) Surface Reconstructions
S. Vezian, F. Semond, J. Massies, D. W. Bullock, Z. Ding and P. M. Thibado
Surface Science 541(1-3), 242 (2003).
- Time-evolution of the GaAs(001) pre-roughening process
Z. Ding, D. W. Bullock, P. M. Thibado, V. P. LaBella, and Kieran Mullen
Surface Science 540(2-3), 491 (2003).
- Atomic-Scale Observation of Temperature and Pressure Driven Preroughening
and Roughening
Z. Ding, D. W. Bullock, P. M. Thibado, V. P. LaBella, and Kieran Mullen
Physical Review Letters 90(21), 216109 (2003).
- Role of Aperiodic Surface Defects on the Intensity of Electron
Diffraction Spots
D. W. Bullock,Z. Ding, and P. M. Thibado, V. P. LaBella
Applied Physics Letters 82(16), 2586 (2003).
- Dynamics of Spontaneous
Roughening on the GaAs (001)-(2 × 4) Surface
Z. Ding, D. W. Bullock, W. F. Oliver and P. M. Thibado,
Journal of Crystal Growth 251(1-4), 35 (2003).
- Simultaneous Surface Topography
and Spin-Injection Probability
D. W. Bullock, V. P. LaBella, Z. Ding, and P. M. Thibado
Journal of Vacuum Science and Technology B, 21(1), 67 (2003).
- Mapping the Spin-Injection Probability
on the Atomic Scale
D. W. Bullock, V. P. LaBella, Z. Ding, and P. M. Thibado
Journal of Superconductivity: Incorporating Novel Magnetism, 15(1), 37 (2002).
- Enhancing the Student-Instructor
Interaction Frequency
D. W. Bullock, V. P. Labella, T. Clingan, Z. Ding, G. Stewart, and P.
M. Thibado
The Physics Teacher, 40, 535 (2002).
- Enabling Electron Diffraction as a
Tool for Determining Substrate Temperature and Surface Morphology
V. P. LaBella, D. W. Bullock, Z. Ding, C. Emery,and P. M. Thibado
Applied Physics Letters 79(19), 3065 (2001)
- Spatially-Resolved Spin-Injection Probability
for Gallium Arsenide
V. P. LaBella, D. W. Bullock, Z. Ding, C. Emery, A. Venkatesan, M. Mortazavi,
W. F. Oliver, G. J. Salamo, and P. M. Thibado
Science 292, 1518 (2001).
- Invited: Union of the
Real Space and Reciprocal Space view of the GaAs(001) Surface
V. P. LaBella, Z. Ding, D. W. Bullock, C. Emery, and P. M. Thibado
International Journal of Modern Physics B 15(17), 2301 (2001).
- Microscopic Structure of
Spontaneously Formed Islands on the GaAs(001)-(2 × 4) Reconstructed
Surface
V. P. LaBella, Z. Ding, D. W. Bullock, C. Emery, and P. M. Thibado
J. Vac. Sci. Technol. B 19(4), 1640 (2001).
- A
Novel STM Imaging Mechanism is Used to Determine the Atomic Structure
of the GaAs(001)-(2 × 4) Surface
V. P. LaBella, D. W.
Bullock, and P. M. Thibado, P. Kratzer and M. Scheffler
Omicron
Newsletter 4(2), 4 (2000).
-
Reflection high-energy electron diffraction and scanning tunneling microscopy study of InP(001) surface reconstruction
V. P. LaBella, Z. Ding, D. W. Bullock, C. Emery, and P. M. Thibado
J. Vac. Sci. Technol. A
18(4), 1492 (2000).
- Monte-Carlo
Derived Diffusion Parameters for Ga on the GaAs(001)-(2 × 4) Surface:
An MBE-STM Study
V. P. LaBella, D. W. Bullock, Z. Ding, C. Emery,
W. G. Harter, and P. M. Thibado
J.
Vac. Sci. Technol. A 18(4), 1526 (2000).
- Microscopic
View of a Two-Dimensional Lattice-Gas Ising System within the Grand
Canonical Ensemble
V. P. LaBella, D. W. Bullock, M. Anser, Z.
Ding, C. Emery, L. Bellaiche, and P. M. Thibado
Physical
Review Letters 84(18), 4152 (2000). Click
here for more information about this study.
- Atomic
Structure of the GaAs(001)-(2 × 4) Surface Resolved Using Scanning
Tunneling Microscopy and First-Principles Theory
V. P. LaBella,
H. Yang, D. W. Bullock, and P. M. Thibado, P. Kratzer and M. Scheffler,
Physical Review Letters 83(15),
2989 (1999). Click here for more
information about this study.
- Role
of As4in Ga Diffusion on the GaAs(001)-(2 × 4) Surface:
An MBE-STM Study
H. Yang, V. P. LaBella, D. W. Bullock, and
P. M. Thibado
J. Vac. Sci.
Technol. B 17(4), 1778 (1999).
- Activation
Energy for Ga Diffusion on the GaAs(001)-(2 × 4) Surface: An MBE-STM
Study
H. Yang, V. P. LaBella, D. W. Bullock, Z. Ding, J. B.
Smathers and P. M. Thibado
Journal of Crystal Growth
201-202(1-4), 88-92 (1999).
- Robust
Optical Delivery System for Measuring Substrate Temperature During Molecular
Beam Epitaxy
P.M. Thibado, G.J. Salamo, Y. Baharav
J.
Vac. Sci. Technol. B, 17(1), 253 (1999).
- Enabling
In Situ Atomic-Scale Characterization of Epitaxial Surfaces and
Interfaces
J.B. Smathers, D.W. Bullock, Z. Ding, G.J. Salamo
and P.M. Thibado
J. Vac.
Sci. Technol. B 16(6), 3112 (1998).
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